Abstract: A method for manufacturing a highly stable metal thin film resistor including a substrate having deposited thereon a sputtered tantalum-silicon alloy film containing from 50-72 atomic percent of silicon, comprising heating the as-sputtered amorphous film to a temperature of between 500.degree. C and 750.degree. C for a time period of from 1 to 60 minutes in an ambient atmosphere of air or oxidizing gas or in an ambient atmosphere of inert gas or a vacuum. The as-sputtered film becomes completely crystallized, and a tantulum-silicon alloy thin film resistor which is high in stability, high in specific resistance and has a low temperature coefficient of resistance is obtained.