Patents Assigned to Nonophase Diamond Technologies, Inc.
  • Field-enhanced diffusion using optical activation
    Patent number: 5597762
    Abstract: A method of making a semiconductor material using a modified forced diffusion method includes the steps of placing the semiconductor material on a substrate in a vacuum vessel, locating an impurity atop the semiconductor material, creating a high voltage potential across the semiconductor material, heating the semiconductor material and bombarding the semiconductor material with photons under the effects of the high voltage and heat previously created. The process is particularly applicable to creating N-type diamond semiconductor material.
    Type: Grant
    Filed: September 27, 1994
    Date of Patent: January 28, 1997
    Assignee: Nonophase Diamond Technologies, Inc.
    Inventors: Galina Popovici, Mark A. Prelas, T. Sung, S. Khasawinah