Abstract: A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

Abstract: A current determiner having an output at which representations of input currents are provided comprising an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction at an angle to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a nonmagnetic layer with one of these two ferromagnetic thin-film layers having a magnetization that is substantially maintained in a selected direction despite the magnetic fields arising from the input currents causing reversals of direction of magnetization of that remaining one of these two ferromagnetic thin-film layers.

Abstract: A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Abstract: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Abstract: A composite film on a substrate having a first magnetostrictive, magnetoresistive, anisotropic ferromagnetic thin-film provided on that substrate with a second ferromagnetic thin-film provided immediately thereon which is also magnetorestrictive, magnetoresistive, anisotropic, with a composition differing from the first ferromagnetic thin-film. Various parameters of said first and second ferromagnetic thin-films are selected to provide such a composite film with little or no magnetostriction. Such composite films can be used in various devices.

Abstract: A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Abstract: A magnetic field sensor having a junction structure in a sensor cell using a dielectric intermediate separating material with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film which is also on a base electrode, and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-film but of differing rotational responses to external magnetic fields. Similar structures have a separated film in each that can be interconnected to one another with the interconnections extending at least in part substantially parallel to the widths of the separated films, and the separated films can have lengths with gradually narrowing widths to the ends thereof as can the base electrode. One or more planar coils can be supported at least in part on the separated films.

Abstract: A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations. Bit structures can be fabricated with further alternating intermediate separating, material layers and varied thickness ferromagnetic thin-film layers, and a configuration thereof can be provided for use as an isolated memory cell.

Abstract: A digital data memory having a bit structure in a memory cell based on an intermediate separating material with two major surfaces having thereon a magnetoresistive, anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to a electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract: A magnetic field sensor having a plurality of interconnected magnetoresistive magnetic field sensing structures with at least one thereof having a permeable material mass adjacent thereto to shield it from externally applied magnetic fields. Another has a shunting structure adjacent a side thereof to remove a fraction of externally applied magnetic fields from affecting same.

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract: A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses. The magnetic material mass being used for shielding can be divided into two masses with one of those masses farthest from the gap serving as the shield.

Abstract: A magnetoresistive layered structure having a pair of magnetoresistive, anisotropic ferromagnetic thin-films separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein.

Abstract: A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 .ANG. thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.

Abstract: A digital memory having a plurality of electrically connected bit structures extending over a path with adjacent ones offset from one another in a direction substantially perpendicular to that path. The bit structures are formed of two ferromagnetic films with an exchange coupling barrier therebetween.

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.