Abstract: The present disclosure relates to an optical waveguide system. The system has a first waveguide having a core-guide and a cladding material portion surrounding and encasing the core-guide to form a substantially D-shaped cross sectional profile with an exposed flat section running along a length thereof. The core-guide enables a core-guide mode for an optical pulse signal having a first characteristic, travelling through the core-guide. A material layer of non-linear material is used which forms a second waveguide. The material layer is disposed on the exposed flat section of the cladding material portion. The material layer forms a plasmonic device to achieve a desired coupling with the core-guide to couple optical energy travelling through the core-guide into the material layer to modify the optical energy travelling through the core-guide such that the optical energy travelling through the core-guide has a second characteristic different from the first characteristic.

Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.

Abstract: Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.