Abstract: A method for predicting a yield of calcium in a calcium treatment process based on deep neural network as provided relates to a calcium treatment process of molten steel refining in the field of iron and steel metallurgy, and includes steps of: obtaining production and operation data information of each of charges and thereby constructing a dataset; training and testing a deep neural network based on constructed dataset to establish a prediction model; and based on the prediction model, predicting and calculating current yield of calcium by taking actual production and operation data information of each charge as input. The method can predict the yield of calcium in the calcium treatment process, is favorable for accurately controlling a calcium content of steel, can stably control the calcium treatment process, improve the calcium treatment effect, improve the product quality, and ensure the production stability.

Abstract: A titanium aluminide (TiAl) coating capable of improving high-temperature oxidation resistance of titanium alloys and a preparation method thereof are provided. The TiAl coating includes ?-AlF3 nanoparticles, and a content of the ?-AlF3 nanoparticles is 5-30 vol. % of the TiAl coating. The preparation method of the TiAl coating includes: using a TiAl alloy target and an ?-AlF3 target as raw materials, and performing magnetron sputtering on a substrate surface to prepare a coating; the magnetron sputtering is double-target co-sputtering, and a substrate temperature during the magnetron sputtering is 150° C., the TiAl alloy target is performed direct current sputtering with a power of 0.5-2 kW, and the ?-AlF3 target is performed radio frequency sputtering with a power of 0.07-0.2 kW. After the coating is obtained by the double-target co-sputtering, the obtained coating is heat-treated at 600-800° C. for 5-20 h to obtain a final coating.

Abstract: A system for measuring a cathode current includes a conducting bar and a current measuring device. The conducting bar has a rectangular plate-like structure, and a first end of the conducting bar is vertically cut to form a plurality of long teeth. The plurality of long teeth are equally spaced at the first end of the conducting bar. The number of the plurality of long teeth is equal to the number of cathodes. The upper surface of each of the long teeth may include a raised conductive contact. Each of the conductive contacts is connected with one cathode of an upstream slot. A second end of the conducting bar is connected with a downstream slot, and the second end of the conducting bar is one end opposite to the first end. The current measuring device is disposed on the conducting bar and used for measuring the current of each cathode.

Abstract: The present invention discloses a system and method for measuring an anode current of an aluminum electrolytic cell. The system includes a plurality of electrolytic cell units, where the electrolytic cell units each include: a column bus, two horizontal buses, m anodes, m anode rods, one or a pair of crossover buses, and a plurality of optical fiber current sensors. When one side of the anode rod is adjacent to another anode rod, the horizontal bus between the two anode rods is provided with one of the optical fiber current sensors; and when any side of the anode rod is adjacent to the column bus or the crossover bus, the horizontal bus between the anode rod and the column bus or the crossover bus is provided with one of the optical fiber current sensors.

Abstract: The present invention discloses a method and system for quickly detecting a cathode short circuit.

Abstract: A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip.

Abstract: A type of high voltage isolation trench, its fabrication method and an MOS device are disclosed. The isolation trench includes a trench extending to a buried oxide layer of a wafer, with high concentration N+ injected to a side wall of the trench, polysilicon being filled in the trench and oxides are being filled between the side wall of the trench and the polysilicon. Multiple composite structures are used to fill the vacant trench to reduce stress brought by trenching so as to improve performance of the device on one hand and to achieve the purpose of increasing breakdown voltage and improving superficial flatness on the other hand.

Abstract: A temperature sensor, based on magnetic tunneling junction (MTJ) device, includes an MTJ device, a PMOS device and an analog switch. Source electrode of the PMOS device is connected to a power supply; drain electrode of the PMOS device is connected to an input terminal of the MTJ device and is connected to the voltage output terminal of the temperature sensor; an output terminal of the MTJ device is connected to a ground or a circuit via the analog switch; drain electrode of the PMOS device is short circuited with gate electrode of the PMOS device. A negative input terminal of an operational amplifier is connected to the voltage output terminal and a positive input terminal of the operational amplifier is connected to a reference voltage. The sensor is compatible with CMOS process and able to simultaneously perform functions such as temperature detection, over-temperature protection and over-current protection.

Abstract: A monolithically-integrated dual surge protective device and its fabrication method are disclosed. The exemplary dual surge protective device includes a LDMOS device and a diode assembly which is consisted. of multiple diodes series-wound on back-to-back basis and whose one end is connected to drain electrode of the LDMOS device and the other-end is connected to gate electrode of the LDMOS device. The diode assembly can be fabricated directly in the gate electrode area of the LDMOS device after fabrication of the LDMOS device is completed. The protective device is equivalent to combination of diodes and LDMOS in respect to operating principles and structures, with the advantage of enhanced effect of surge prevention and cost reduction of surge device as it can be integrated into a chip.