Patents Assigned to Northop Grumman Systems Corporation
  • Patent number: 9893460
    Abstract: A system includes a first mating component formed from a self-passivating transition metal to supply power. The self-passivating transition metal has a property of forming a non-conductive passivation layer when immersed in water. A second mating component formed from a self-passivating transition metal provides a return path for the power and forms the non-conductive passivation layer when immersed in the water.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: February 13, 2018
    Assignee: Northop Grumman Systems Corporation
    Inventors: James Richard Windgassen, Harvey Paul Hack, Jeffrey Martin Matejka
  • Patent number: 7830644
    Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: November 9, 2010
    Assignee: Northop Grumman Systems Corporation
    Inventors: Narsingh B. Singh, John J. Talvacchio, Marc Sherwin, Andre Berghmans, David J. Knuteson, David Kahler, Brian Wagner, John D. Adam