Abstract: Silicon carbide is produced in two steps in that silicon dioxide and a carbon source in a first step is reacted at a temperature in the range of 1500-1800.degree. C., whereby the silicon dioxide and the carbon source react to form .beta.-silicon carbide. The resulting .beta.-silicon carbide formed is subsequently treated at a temperature of 1800-2300.degree. C. for conversion of the .beta.-silicon carbide into the desired end product, via .alpha.-silicon carbide.