Patents Assigned to Nova Measuring Instruments Inc.
  • Patent number: 10119925
    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: November 6, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
  • Patent number: 10056242
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: August 21, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Patent number: 9952166
    Abstract: Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: April 24, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: Heath A. Pois, Wei Ti Lee