Patents Assigned to Nova Measuring Instruments Inc.
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Publication number: 20240085174Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: August 21, 2023Publication date: March 14, 2024Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei T LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
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Publication number: 20240087869Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: ApplicationFiled: September 18, 2023Publication date: March 14, 2024Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
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Publication number: 20240044825Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: ApplicationFiled: June 19, 2023Publication date: February 8, 2024Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Charles LARSON, Kavita SHAH, Wei T. LEE
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Patent number: 11874237Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.Type: GrantFiled: December 8, 2020Date of Patent: January 16, 2024Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath Pois, David Reed, Bruno Shueler, Rodney Smedt, Jeffrey Fanton
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Patent number: 11852467Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.Type: GrantFiled: March 12, 2020Date of Patent: December 26, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Laxmi Warad, Srinivasan Rangarajan
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Patent number: 11823883Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: November 19, 2021Date of Patent: November 21, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Patent number: 11764050Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: August 23, 2022Date of Patent: September 19, 2023Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Publication number: 20230288196Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.Type: ApplicationFiled: October 24, 2022Publication date: September 14, 2023Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei Ti LEE, Laxmi WARAD, Dmitry Kislitsyn, Parker Lund, Benny Tseng, James CHEN, Saurabh Singh
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Patent number: 11733035Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: June 8, 2021Date of Patent: August 22, 2023Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath Pois, Wei T Lee, Lawrence Bot, Michael Kwan, Mark Klare, Charles Larson
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Patent number: 11680915Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: GrantFiled: May 30, 2022Date of Patent: June 20, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Charles Larson, Kavita Shah, Wei T Lee
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Patent number: 11668663Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: January 13, 2020Date of Patent: June 6, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
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Publication number: 20230091625Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: ApplicationFiled: August 23, 2022Publication date: March 23, 2023Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
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Publication number: 20230021209Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: ApplicationFiled: May 30, 2022Publication date: January 19, 2023Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Charles LARSON, Kavita SHAH, Wei T LEE
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Publication number: 20220390395Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.Type: ApplicationFiled: October 22, 2020Publication date: December 8, 2022Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. REED, Bruce H. NEWCOME, Bruno W. SCHUELER
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Patent number: 11430647Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: GrantFiled: February 1, 2021Date of Patent: August 30, 2022Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
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Patent number: 11346795Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: GrantFiled: October 9, 2020Date of Patent: May 31, 2022Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
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Publication number: 20210372787Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: June 8, 2021Publication date: December 2, 2021Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei T. LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
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Patent number: 11183377Abstract: An ion detector for secondary ion mass spectrometer, the detector having an electron emission plate coupled to a first electrical potential and configured to emit electrons upon incidence on ions; a scintillator coupled to a second electrical potential, different from the first electrical potential, the scintillator having a front side facing the electron emission plate and a backside, the scintillator configured to emit photons from the backside upon incidence of electrons on the front side; a lightguide coupled to the backside of the scintillator and confining flow of photons emitted from the backside of the scintillator; and a solid-state photomultiplier coupled to the light guide and having an output configured to output electrical signal corresponding to incidence of photons from the lightguide. A SIMS system includes a plurality of such detectors movable arranged over the focal plane of a mass analyzer.Type: GrantFiled: May 12, 2017Date of Patent: November 23, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Christopher F. Bevis, Yungman Alan Liu, David Allen Reed, Eli Cheifetz, Amit Weingarten, Alexander Kadyshevitch
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Publication number: 20210305037Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).Type: ApplicationFiled: February 1, 2021Publication date: September 30, 2021Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
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Patent number: 11029148Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: May 12, 2020Date of Patent: June 8, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson