Abstract: A method and system are presented for inspecting a structure containing a pattern in the form of a surface relief fabricated by a pattern-creating tool applied to the structure. Reference data is provided being indicative of photometric intensities of light components of different wavelengths returned from a structure having a pattern similar to the pattern of the structure under inspection. Spectrophotometric measurements are continuously applied to successive locations within the surface relief on the structure so as to form a measurement slice thereon. Measured data in the form of a spectrum indicative of photometric intensities of light components of different wavelengths returned from the successive locations within the slice is detected and analyzed to determine whether it correlates with the reference data in accordance with predetermined criteria results.

Abstract: A method is presented for controlling a process to be applied to a patterned structure in a production run. Reference data is provided being representative of diffraction signatures corresponding to a group of different fields in a structure similar to the patterned structure in the production line, and of a control window for the process parameters corresponding to a signature representative of desired process results. The group of different fields is characterized by different process parameters used in the manufacture of these fields. The method utilizes an expert system trained to be responsive to input data representative of a diffraction signature to provide output data representative of corresponding effective parameters of the process. Optical measurements are applied to different sites on the patterned structure in the production line to obtain diffraction signatures of thereof and generate corresponding measured data.

Abstract: A method and system are presented for determing a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least two structures aligned along a vertical axis in a spaced-apart parallel relationship, each structure comprising at least one pattern zone containing spaced-apart metal regions, the test structure thereby comprising at least one pair of vertically aligned upper and lower pattern zones. The upper and lower pattern zones in each pair have different patterns oriented with respect to each other such that the metal regions of the lower pattern are located underneath the spaces between the metal regions of the upper pattern.

Abstract: A measurement method and system are presented for measuring parameters of a patterned structure. Scatterometry and SEM measurements are applied to the structure, measured data indicative of, respectively, the structure parameters and lateral pattern dimensions of the structure are generated. The entire measured data are analyzed so as to enable using measurement results of either one of the scatterometry and SEM measurements for optimizing the other measurement results.

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract: A processing unit for processing at least one semiconductor wafer includes a processing station for processing the wafer, a measuring station for measuring the at least one wafer, a robot for moving the wafer between the processing and measuring stations, a wafer handling system and a buffer station. The wafer handling system operates in conjunction with the measuring station and moves the wafer to and from a measuring location on the measuring unit. The buffer station is associated with the wafer handling system and receives measured and unmeasured wafers thereby to enable the robot to arrive at and leave the measuring station with at least one wafer thereon.

Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

Abstract: A method and system are presented for use in controlling a process of material removal from the surface of a patterned structure, by measuring at least one of residue, erosion, dishing and corrosion effects in the structure induced by this process. The structure is imaged utilizing phase modulation of light reflected from the structure, and a phase map of the structure is thereby obtained. This phase map is analyzed and data indicative of light reflective properties of layer stacks of the structure is utilized to determine a phase difference between light reflected from a selected measured site and at least one reference site spaced-apart from the selected site. The phase difference is thus indicative of the measured effect.

Abstract: An apparatus for processing substrates according to a predetermined photolithography process is presented. The apparatus includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station. The monitoring station comprises an optical monitoring system comprising a spectrophotometric channel, and is accommodated in a sealed enclosure, such that incident light passes through the optical system towards the substrate through a transparent window.

Abstract: A method and system are presented for optical measurements in multi-layer structures to determine the properties of at least some of the layers. The structure is patterned by removing layer materials within a measurement site of the structure from the top layer to the lowermost layer of interest. Optical measurements are sequentially applied to the layers, by illuminating a measurement area in the layer under measurements, when the layer material above said layer under measurements is removed, thereby obtaining measured data portions for the at least some of the layers, respectively. The properties of each of the at least some layers are calculated, by analyzing the measured data portion of the lowermost layer, and then sequentially interpreting the measured data portions of all the other layers towards the uppermost layer, while utilizing for each layer the calculation results of the one or more underlying layers.

Abstract: A method for measuring at least one desired characteristic of a patterned article is presented. The article is of a kind containing a plurality of different pattern elements located at different sites, each including a stack of layers. An optical model is provided, which is based on a set of parameters corresponding to predetermined characteristics of the article, and is capable of generating theoretical data indicative of spectral response of the article. The set of parameters includes parameters corresponding to geometrical characteristics of the pattern elements. Reference data is prepared containing a plurality of sets of parameters for at least some of the different pattern elements. A spectral measurement of light response is carried out at a selected site of the patterned article and measured data is generated.

Abstract: A method for determining the orientation of a pattern on the surface of an object relative to the object. The pattern comprises an array of generally perpendicular grid lines intersecting at grid junctions, and the object comprises a marker located at an edge thereof. The method comprises: determining the directions of the grid lines relative to the direction of the reference coordinate system, determining the direction of object's orientation axis relative to the direction of the reference coordinate system, and determining the orientation of the grid lines relative to the object's orientation axis. The step of determining the direction of object's orientation axis comprises the steps of determining a location of the geometrical center of the object in the reference coordinate system and detecting and determining a location of the marker in the reference coordinate system.

Abstract: A buffer station for an article handling system, the handling system having a general path along which it moves when handling the article, the buffer station including at least two supporting assemblies including supporting elements forming a supporting plane each capable of supporting an article within the supporting plane and located so as to support the article within the general path, at least two receptacles for liquid in which the at least two supporting assemblies are disposed, and at least two drivers associated with the at least two supporting assemblies and the receptacles for shifting them in and out of the general path.

Abstract: An imaging method and system are presented for detecting the topography of a sample surface. Illuminating light is directed to the sample by sequentially passing the illuminating light through a grating and an objective lens arrangement The grating has a pattern formed by spaced-apart transparent regions spaced by non-transparent regions, and is specifically oriented with respect to the optical axis of the objective lens arrangement. Light, specularly reflected from the sample, is collected by the same objective lens arrangement and is directed to an imaging detector through the same grating, thereby enabling creation of an image of the illuminated sample indicative of the topography of the sample surface.

Abstract: A method and measuring tool are presented for automatic control of photoresist-based processing of a workpiece progressing through a processing tool arrangement. Spectrophotometric measurements are applied to the workpiece prior to being processed, spectral characteristics of the workpiece are measured, thereby obtaining measured data indicative of at least one parameter of the workpiece that defines an optimal value of at least processing time parameter of the processing tool to be used in the processing of said workpiece to obtain certain process results. This data is analyzed to determine data indicative of the optimal value of said at least processing time parameter, and thereby enable calculation of a correction value to be applied to said processing time parameter prior to applying the processing tool to the workpiece.

Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of incident radiation. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a pitch of the structure under measurements. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure.

Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of optical measurements at more than one spectral range that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit (110) for performing optical measurements in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit (10,50), supporting means (30) for holding, rotating and translating the wafer and a control unit (120). The measuring unit (110) comprises: (a) at least two separate optical units, each operating at a different distinct spectral range; (b) a separate optical window for each optical unit (31, 32); (c) at least one movable optical head (34); (d) mechanical means for translating said optical head relatively to the wafer's surface.

Abstract: A method and a system are presented for automatic optical control of at least one working parameter of a processing tool to be applied to a working area of a workpiece for providing certain process results. The at least one working parameter of the processing tool affects at least one parameter of the workpiece under processing. The processing tool has a preset value of the at least one working parameter prior to the processing of the workpiece. A measuring tool is applied to the workpiece prior to its processing by the processing tool for measuring the at least one parameter of the workpiece and generating measured data representative thereof. The measured data is analyzed with respect to the preset value of the working parameter and to the process results, so as to determine whether the preset value should be corrected for providing the certain process results when applying the processing tool to said workpiece. Upon detecting that the preset value should be corrected, calculating a correction value.

Abstract: A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.