Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: The present invention relates to a method for preparing doped organic semiconductor materials

Abstract: The present invention relates to the use of bora-tetraazapentalenes with the general formula A as redox-dopant and/or emitter in electronic, optoelectronic or electroluminescent structural elements.

Abstract: In order, in the case of an OLED, to improve the coupling-out efficiency, a top emitting electroluminescent component (100) is proposed, comprising a substrate (110), a first electrode (120) closest to the substrate, a transparent electrode (140) located at a distance from the substrate, and at least one light-emitting organic layer (130) arranged between the two electrodes. The component according to the invention is distinguished by the fact that a coupling-out layer (150) is arranged on that side of the second electrode which is remote from the at least one organic layer, said coupling-out layer comprising conversion centres (151) which partly absorb the light emitted by the at least one organic layer and emit it again with an altered frequency.

Abstract: The invention relates to quinoid compounds and their use in semiconductive matrix materials, electronic and optoelectronic structural elements.

Abstract: Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c:

Abstract: The present invention relates to light-emitting devices and in particular organic light-emitting devices (OLEDs). In particular, the invention relates to the use of luminescent isonitrile/metal complexes as oligomer emitters in devices of this type.

Abstract: The invention relates to aryl- and/or heteroaryl-substituted main group element halides and/or pseudohalides, the use of main group element halides and/or pseudohalides as dopant for the doping of an organic semiconducting matrix material, as charge injection layer, as hole blocker layer, as electrode material, as transport material itself, as memory material in electronic or optoelectronic structural elements.

Abstract: The invention relates to an organic electronic memory component having an electrode and a counterelectrode and an organic layer arrangement formed between said electrode and counterelectrode and in electrical contact herewith. wherein the organic layer arrangement comprises the following organic layers: an electrode-specific charge carrier transport layer and a counterelectrode-specific charge carrier-blocking layer and disposed between said electrode-specific charge carrier transport layer and counterelectrode-specific charge carrier-blocking layer a memory layer region having a charge carrier-storing layer and a further charge carrier-storing layer between which charge carrier-storing layer and a further charge carrier-storing layer is disposed a charge carrier barrier layer. Furthermore the invention relates to a method for the operating of an organic electronic memory component.

Abstract: The present invention relates to square planar transition metal complexes and their use in organic semiconductive materials as well as in electronic or optoelectronic components.

Abstract: The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of maximum approx. ?1.5 V, if the low-molecular layer is arranged adjacent to the cathode contact, and as acceptor molecules with a reduction potential versus Fc/Fc+ (ferrocene/ferrocenium redox couple) of minimum approx. ?0.3 V if the low-molecular layer is arranged adjacent to the anode contact.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Abstract: The present invention relates to the use of a square planar transition metal complex as dopant, charge injection layer, electrode material or storage material.

Abstract: The invention relates to a method and a circuit arrangement for the ageing compensation of an organic light-emitting diode (OLED) which is fed from a supply voltage and is switched by means of a driver transistor operated in saturation operation, by means of a driving of the light-emitting diode.

Abstract: A HEMT device including a GaN channel structure including a very thin (Al, In, Ga)N subchannel layer (14) that is disposed between a first GaN channel layer (12) and a second GaN channel layer (16), to effect band bending induced from the piezoelectric and spontaneous charges associated with the (Al, In, Ga)N subchannel layer. This GaN channel/(Al, In, Ga)N subchannel arrangement effectively disperses the 2DEG throughout the channel of the device, thereby rendering the device more linear in character (relative to a corresponding device lacking the subchannel (Al5In3Ga)N sub-layer), without substantial loss of electron mobility.

Abstract: The invention relates to an organic light emitting component, particularly an organic light emitting diode, in which an arrangement is formed that comprises a bottom electrode, a top electrode, and an organic layer region which is located between and is in electrical contact with the bottom electrode and the top electrode and contains at least one hole transport layer, at least one electron transport layer, and a light-emitting area. The bottom electrode is formed from a dispersion as a structured, binder-free, and optically transparent bottom electrode layer made of a bottom electrode material by means of a wet chemical application process, said bottom electrode material being an optically transparent, electrically conductive oxide. The bottom electrode layer has a sheet resistance of less than about 500 ?/square and an optical refractive index of less than 1.8.

Abstract: The invention relates to a transparent light-emitting component, in particular organic light-emitting diode, having a transparent layer arrangement in which are formed, on a substrate in a stack, planar electrodes and an organic region arranged between the planar electrodes, which organic region comprises a light-emitting layer, made from one or a plurality of organic materials. For at least one direction of incidence, a transmittance of the transparent layer arrangement for at least one wavelength subrange in the visible spectral range is greater than 50%.

Abstract: The invention concerns a transparent light-emitting component, in particular an organic light-emitting diode (OLED), with a layer arrangement in which a light-emitting organic layer is arranged between an upper and a lower electrode, the layer arrangement being transparent in a switched-off state and emitting light which is produced in the light-emitting organic layer by applying an electric voltage to the upper and the lower electrode in a switched-on state, which light is radiated in a ratio of at least approximately 4:1 through the upper or the lower electrode and where a stack, which is transparent in the visible spectral region, of dielectric layers is arranged on the side of the upper or the lower electrode.

Abstract: The invention relates to a light-emitting component, in particular organic light-emitting diode, having an electrode and a counterelectrode and an organic region—arranged between the electrode and the counterelectrode—with a light-emitting organic region, which comprises an emission layer and a further emission layer and which, upon application of an electrical voltage to the electrode and the counterelectrode, is formed in a manner emitting light in a plurality of colour ranges in the visible spectral range, optionally through to white light, in which case the emission layer comprises a fluorescent emitter which emits light predominantly in the blue or in the blue-green spectral range; the further emission layer comprises one or a plurality of phosphorescent emitters emitting light predominantly in the non-blue spectral range; a triplet energy for an energy level of a triplet state of the fluorescent emitter in the emission layer is greater than a triplet energy for an energy level of a triplet state of the