Patents Assigned to Novel Crystal Technology, Inc.
  • Publication number: 20210020789
    Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer stacked on the first semiconductor layer, includes a Ga2O3-based single crystal, and includes a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench electrode that is buried in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes an insulating dry-etching-damaged layer with a thickness of not more than 0.8 ?m in a region including the inner surface of the trench.
    Type: Application
    Filed: February 25, 2019
    Publication date: January 21, 2021
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc., TDK Corporation
    Inventors: Kohei SASAKI, Minoru FUJITA, Jun HIRABAYASHI, Jun ARIMA
  • Publication number: 20200235234
    Abstract: A field-effect transistor includes an n-type semiconductor layer that includes a Ga2O3-based single crystal and a plurality of trenches opening on one surface, a gate electrode buried in each of the plurality of trenches, a source electrode connected to a mesa-shaped region between adjacent trenches in the n-type semiconductor layer, and a drain electrode directly or indirectly connected to the n-type semiconductor layer on an opposite side to the source electrode.
    Type: Application
    Filed: September 26, 2018
    Publication date: July 23, 2020
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventor: Kohei SASAKI
  • Publication number: 20200168711
    Abstract: A diode includes an n-type semiconductor layer including an n-type Ga2O3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor in which a volume of an amorphous portion is higher than a volume of a crystalline portion. The n-type semiconductor layer and the p-type semiconductor layer form a pn junction.
    Type: Application
    Filed: July 23, 2018
    Publication date: May 28, 2020
    Applicants: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventor: Kohei SASAKI
  • Publication number: 20200066921
    Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.
    Type: Application
    Filed: February 27, 2018
    Publication date: February 27, 2020
    Applicants: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.
    Inventors: Kohei SASAKI, Masataka HIGASHIWAKI
  • Publication number: 20190363197
    Abstract: Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
    Type: Application
    Filed: February 19, 2018
    Publication date: November 28, 2019
    Applicants: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.
    Inventors: Kohei SASAKI, Daiki WAKIMOTO, Yuki KOISHIKAWA, Quang Tu THIEU
  • Patent number: 10358742
    Abstract: A method of growing a conductive Ga2O3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga2O3-based crystal substrate so as to grow the Ga2O3-based crystal film. The Ga2O3-based crystal film includes a Si-containing Ga2O3-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: July 23, 2019
    Assignees: TAMURA CORPORATION, Novel Crystal Technology, Inc.
    Inventors: Kohei Sasaki, Daiki Wakimoto