Abstract: In one embodiment, a memory includes a row and/or column redundancy architecture that uses binary cells to indicate whether a given row or column of memory cells is faulty. The binary cell is adapted to store a “repair true” signal in response to a conventional access to the corresponding row or column and also the assertion of a set signal.
Type:
Grant
Filed:
January 18, 2008
Date of Patent:
June 15, 2010
Assignee:
Novelies, LLC
Inventors:
Morteza Cyrus Afghahi, Esin Terzioglu, Gil I. Winograd