Abstract: A method for producing a quantum dot that includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

Abstract: A wavelength conversion member, for a backlight, is provided. The wavelength conversion member includes a stack of a plurality of resin layers, with at least one of the plurality of resin layers containing quantum dots. The plurality of resin layers is integrally molded through co-extrusion, and forms a three-layer structure comprising a middle layer containing the quantum dots and upper and lower layers that do not contain the quantum dots. The upper layer and the lower layer are respectively on an upper side and a lower side of the middle layer. The upper and lower layers each contain a light scattering agent. Each of the plurality of resin layers is directly joined together with a bonding layer at an interface between the middle layer and the upper layer and not at an interface between the middle layer and the lower layer.

Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 58 or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.

Abstract: An object of the present invention is to provide a quantum dot and a method for manufacturing a quantum dot capable of enhancing the EQE. A method for manufacturing the quantum dot of the present invention includes steps of: generating a core and coating a shell on a surface of the core, wherein in the step of coating the shell, an acidic compound and a zinc halide compound are blended in a shell raw material. In the present invention, the step of coating the shell is divided into at least a first half and a second half. In the first half, a shell raw material in which the acidic compound is blended and the zinc halide compound is not blended is used, while in the second half, it is preferable that the shell is coated a plurality of times using the shell raw material in which both the acidic compound and the zinc halide compound are blended.

Abstract: A Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 5% or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.

Abstract: An object of the present invention is to provide a method for manufacturing quantum dots capable of containing a large amount of Zn on a surface thereof, and a quantum dot. A method for manufacturing quantum dots of the present invention includes a step of producing a core containing at least Ag, Ga, and S or Ag, Ga, and Se, and a step of coating a surface of the core with a shell, and in the step of coating with the shell, the surface of the core is coated with GaS, and then Zn is added. It is preferable that the surface of the core is coated with ZnS after being coated with GaS. It is preferable that the core and the shell do not contain Cd and In.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: To provide a quantum dot-containing resin sheet or film, a method for producing the same, and a wavelength conversion member that can, in particular, solve the problem of aggregation of the quantum dots and the problem with the use of a scattering agent, suppress a decrease in light conversion efficiency, and improve the light conversion efficiency of a resin molded product containing quantum dots. The quantum dot-containing resin sheet or film of the present invention includes a stack of a plurality of resin layers, at least one of the resin layers containing quantum dots, and the plurality of resin layers is integrally molded through co-extrusion.

Abstract: A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

Abstract: Provided is a Cd-free blue fluorescent quantum dot with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 25 nm or less. The quantum dot is preferably a nanocrystal containing zinc and selenium or zinc and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgInxGa1-xSySe1-y or ZnAgInxGa1-xSySe1-y (where 0?x<1 and 0?y?1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: To provide a quantum dot-containing resin sheet or film, a method for producing the same, and a wavelength conversion member that can, in particular, solve the problem of aggregation of the quantum dots and the problem with the use of a scattering agent, suppress a decrease in light conversion efficiency, and improve the light conversion efficiency of a resin molded product containing quantum dots. The quantum dot-containing resin sheet or film of the present invention includes a stack of a plurality of resin layers, at least one of the resin layers containing quantum dots, and the plurality of resin layers is integrally molded through co-extrusion.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

Abstract: To provide a quantum dot-containing resin sheet or film, a method for producing the same, and a wavelength conversion member that can, in particular, solve the problem of aggregation of the quantum dots and the problem with the use of a scattering agent, suppress a decrease in light conversion efficiency, and improve the light conversion efficiency of a resin molded product containing quantum dots. The quantum dot-containing resin sheet or film of the present invention includes a stack of a plurality of resin layers, at least one of the resin layers containing quantum dots, and the plurality of resin layers is integrally molded through co-extrusion.

Abstract: A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).

Abstract: A method of producing a wavelength converting member is provided. The method includes forming a quantum dot layer on a bottom organic layer, and forming a top organic layer on the quantum dot layer. The quantum dot layer includes quantum dots. A moisture vapor transmission rate of the top organic layer and the bottom organic layer is at least 0.006 g/(m2·day) and less than 9 g/(m2·day).

Abstract: The present invention seeks to provide cadmium-free quantum dots with a narrow fluorescence FWHM. The quantum dot does not contain cadmium and its fluorescence FWHM is 30 nm or less. The quantum dot is preferably a nanocrystal containing zinc and tellurium or zinc and tellurium and sulfur or zinc and tellurium and selenium and sulfur. Further, the quantum dot preferably has a core-shell structure in which the nanocrystal serves as a core and the surface of the core is coated with a shell.

Abstract: Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.