Patents Assigned to NSC Electron Corp.
  • Silicon wafer excelling in gettering ability and method for production thereof
    Patent number: 5189508
    Abstract: A silicon wafer comprising a substrate of single crystal silicon, a silicon oxide film 1 to 8 .ANG. in thickness formed on one surface of said substrate, and a polysilicon layer formed on said silicon oxide film and possessing an excellent gettering ability, is prepared by oxidizing single crystal silicon, thereby forming a silicon oxide film 1 to 8 .ANG. in thickness on said surface, and exposing said silicon oxide film to a gaseous silane at an elevated temperature, thereby forming a polysilicon layer on said silicon oxide film.
    Type: Grant
    Filed: October 31, 1991
    Date of Patent: February 23, 1993
    Assignees: Nippon Steel Corporation, NSC Electron Corp.
    Inventors: Masaharu Tachimori, Kazunori Ishizaka, Hideo Araki