Abstract: An embodiment of a microwave power generation module includes an amplifier arrangement, an impedance matching element, and a resonant element. The amplifier arrangement includes a transistor with a transistor input and a transistor output. The impedance matching element is formed from a planar conductive structure. The planar conductive structure has a proximal end and a distal end, and the proximal end is electrically coupled to the transistor output. The resonant element has a proximal end electrically coupled to the distal end of the planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz). A combination of the impedance matching element and the resonant element is configured to perform an impedance transformation between an impedance of the transistor and an impedance of an air cavity.
Type:
Grant
Filed:
August 29, 2013
Date of Patent:
September 22, 2020
Assignee:
NSP USA, Inc.
Inventors:
Pierre-Marie J. Piel, David P. Lester, Lionel Mongin
Abstract: A transistor includes a semiconductor substrate having a first terminal and a gate region, and an interconnect structure formed of multiple layers of dielectric and electrically material on an upper surface of the semiconductor substrate. The electrically conductive material includes first and second layers, the second layer being spaced apart from the first layer by a first dielectric layer of the dielectric material, the first layer residing closest to the upper surface of the semiconductor substrate relative to the second layer. The interconnect structure includes a pillar formed from the conductive material. The pillar is in electrical contact with the first terminal, the pillar extends through the dielectric material, and the pillar includes a pillar segment in the first layer of the conductive material. The interconnect structure also includes a shield structure in the first layer of the conductive material and positioned between the pillar segment and the gate region.
Type:
Grant
Filed:
August 28, 2018
Date of Patent:
March 17, 2020
Assignee:
NSP USA, Inc.
Inventors:
Ibrahim Khalil, Charles John Lessard, Damon G. Holmes, Hernan Rueda
Abstract: A method and apparatus are provided for migrating one or more hardware devices (105) associated with a virtual machine (103) from a source machine (101) to a destination machine (111) by capturing, formatting, storing, and transferring hardware context information from the hardware device(s) at the source machine during the virtual machine migration process using a defined handshake protocol at each associated hardware driver (105) to capture the hardware context information from an associated hardware device (105) being migrated.
Abstract: Embodiments of a method for fabricating System-in-Packages (SiPs) are provided, as are embodiments of a SiP. In one embodiment, the method includes producing a first package including a first molded package body having a sidewall. A first leadframe is embedded within the first molded package body and having a first leadframe lead exposed through the sidewall. In certain implementations, a semiconductor die may also be encapsulated within the first molded package body. A Surface Mount Device (SMD) is mounted to the sidewall of the first molded package body such that a first terminal of the SMD is in ohmic contact with the first leadframe lead exposed through the sidewall.