Abstract: A signal conversion processing apparatus for temporarily storing an input analog signal and processing the signal to generate a desired output signal includes nonvolatile semiconductor memory sections, an input control section, and a signal processing section. The nonvolatile semiconductor memory sections sequentially store the input analog signal on the basis of a predetermined first control signal in the form of an analog value. The input control section selects a nonvolatile semiconductor memory section, in which the analog signal is to be written, from the nonvolatile semiconductor memory sections on the basis of a predetermined second control signal. The signal processing section performs arithmetic processing of a plurality of analog data read out from the nonvolatile semiconductor memory sections to convert the analog data into a desired output signal in the form of an analog value.

Abstract: A semiconductor memory device includes a memory cell and first and second electrodes. The memory cell has a floating gate formed on a semiconductor substrate via a gate insulating film to be insulated from a remaining part, and a control gate formed on the floating gate via an isolation insulating film. The first electrode is formed on the floating gate via a first insulating film in a region of the floating gate except for a channel region for constituting the memory cell. The second electrode is formed on the floating gate via a second insulating film in a region of the floating gate except for the channel region for constituting the memory cell. When a predetermined voltage is applied to the first and second electrodes, a tunnel current flows through the first and second insulating films.