Abstract: A photoelectric surface electron source includes a glass substrate configured to receive laser light incident from a substrate back surface to emit the laser light from a substrate main surface, a photoelectric surface provided on the substrate main surface and configured to receive the laser light and emit a photoelectron, a lens array disposed on the substrate back surface and including a plurality of microlenses for condensing the laser light toward the photoelectric surface, and a light shielding portion provided on the glass substrate. The light shielding portion has a back surface-side light shielding layer provided on a back surface-side light shielding surface interposed between the plurality of microlenses on the substrate back surface, and a main surface-side light shielding layer provided on a main surface-side light shielding surface.

Abstract: In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.

Abstract: A multi-electron beam writing apparatus includes a light source array to include plural light sources and generate plural first lights, a multi-lens array to include plural first lenses, and to divide the plural first lights into plural second lights by that each of the plural first lights illuminates a corresponding lens set of plural lens sets each composed of plural second lenses being a portion of the plural first lenses and by that each of lenses, being at least a part of the plural second lenses, is irradiated with two or more first lights of the plural first lights, a photoemissive surface to receive the plural second lights through its upper surface, and emit multiple photoelectron beams from its back surface, and a blanking aperture array mechanism to perform an individual blanking control by individually switching between ON and OFF of each of the multiple photoelectron beams.

Abstract: A multi charged particle beam apparatus irradiates a substrate placed on a stage with a multi charged particle beam through an illumination optical system including a plurality of components, and an objective lens successively. In one embodiment, an optical system adjustment method for the multi charged particle beam apparatus includes measuring positional deviation amounts of a plurality of individual beams included in the multi charged particle beam at two or more different heights in an optical axis direction of a measurement surface or an imaging position of the multi charged particle beam, calculating a normalized position difference based on the two or more heights and the positional deviation amounts, the normalized position difference being an illumination system aberration equivalent amount of the illumination optical system, and adjusting a set value for at least one of the plurality of components using a value of the normalized position difference.

Abstract: The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Abstract: A pattern inspection apparatus according to one aspect of the present invention includes an image acquisition mechanism configured to acquire an inspection image of a substrate on which a figure pattern is formed, a distortion coefficient calculation circuit configured to calculate, using a plurality of actual image outline positions on an actual image outline of the figure pattern in the inspection image and a plurality of reference outline positions on a reference outline to be compared with the actual image outline, distortion coefficients by performing weighting in a predetermined direction at each actual image outline position of the plurality of actual image outline positions caused by distortion of the inspection image, a distortion vector estimation circuit configured to estimate, for each actual image outline position of the plurality of actual image outline positions, a distortion vector by using the distortion coefficients, and a comparison circuit configured to compare, using the distortion vector

Abstract: The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.

Abstract: A pattern inspection apparatus includes an optical image acquisition mechanism to acquire an optical image of each of a plurality of regions on the inspection substrate where a pattern is formed, a plurality of comparison circuits to individually compare the optical image with a reference image corresponding to the optical image, an abnormality determination circuit to determine, based on comparison results, whether there is a region having an inspection abnormality in the plurality of regions, a malfunction diagnosis circuit to diagnose whether a comparison circuit that performed comparison for the region determined to have the inspection abnormality in the plurality of regions has a malfunction, and an assignment processing circuit to individually assign regions of the plurality of regions where comparison is to be performed to comparison circuits that are not diagnosed as malfunctions, and to exclude a comparison circuit diagnosed as a malfunction from the region assignment target.

Abstract: A multi-charged particle beam writing apparatus includes a beam forming mechanism to form multi-charged-particle-beams, a block region forming circuit to form plural block regions from an irradiation region of the multi-charged-particle-beams formed by combining plural sub-regions each surrounded by a beam, being different from each other, and plural other beams adjacent to the beam in the multi-charged-particle-beams, and a writing mechanism to perform, using the multi-charged-particle-beams, multiple writing such that irradiation of each block region of the plural block regions is at least performed by any one of writing processing of the multiple writing, and such that each writing processing of the multiple writing is performed to write a writing region of a target object in a manner of covering the writing region without overlapping by, using one of the plural block regions, irradiation of the one of the plural block regions.

Abstract: A multi-electron beam inspection apparatus includes a multi-detector that includes a plurality of detection sensors each of which detects a secondary electron beam emitted due to that a target object is irradiated with a primary electron beam individually preset in multiple secondary electron beams emitted because the target object is irradiated with multiple primary electron beams, a reference image data generation circuit that generates reference image data of a position irradiated with each primary electron beam, based on design data serving as a basis of the pattern formed on the target object, a synthesis circuit that synthesizes, for each primary electron beam, the reference image data of the position irradiated with a primary electron beam concerned and portions of reference image data of positions irradiated with other primary electron beams different from the primary electron beam concerned, and a comparison circuit that compares synthetic reference image data having been synthesized, and secondary e

Abstract: According to one aspect of the present invention, an electron beam irradiation apparatus includes a photoelectric surface configured to receive irradiation of excitation light on a side of a front surface, and generate electron beams from a side of a back surface; a blanking aperture array mechanism provided with passage holes corresponding to the electron beams and configured to perform deflection control on each of the plurality of electron beams passing through the passage holes; and an adjustment mechanism configured to adjust at least one of an orbit of transmitted light that passes through at least one of arrangement objects including the photoelectric surface, the blanking aperture array mechanism, and the limit aperture substrate up to the stage and reaches the stage, among an irradiated excitation light, and an orbit of the electron beams, wherein the arrangement objects shield at least a part of the transmitted light.

Abstract: A charged particle beam adjustment method includes scanning, with a charged particle beam an emission current of which is set to a first adjustment value smaller than a target value, an aperture substrate including a hole disposed to be a focus position of the charged particle beam using each of lens values in an electron lens and calculating first resolution, calculating a first function of lens values and the first resolution and calculating a lens value range, scanning, with the charged particle beam the emission current of which is set to a second adjustment value, the aperture substrate using each of lens values set to avoid the lens value range and calculating second resolution, calculating a second function of lens values and the second resolution and estimating a lens value at a just focus, and adjusting the electron lens to the lens value at the just focus.

Abstract: A method for estimating the cathode lifetime of an electron gun includes recording the change amount, per unit temperature increase of the cathode of an electron gun which emits an electron beam, with respect to a parameter value relating to the electron beam, to be recorded in relation to the usage time of the cathode, and estimating the lifetime of the cathode by one of estimating a time obtained by adding a predetermined time to a time at which the change amount recorded a plurality of times becomes lower than a prescribed value as the lifetime of the cathode, and estimating, using an approximate line obtained by approximating the change amount recorded a plurality of times, a time at which the change amount becomes zero as the lifetime of the cathode, and outputting the estimated lifetime.

Abstract: A pattern inspection apparatus includes an actual outline image generation circuit to generate an actual outline image of a predetermined region defined by a function, where the gray scale value of each pixel in the predetermined region including plural actual image outline positions on an actual image outline of a figure pattern in an inspection image is dependent on a distance from the center of a pixel concerned to the closest actual image outline position in the plural actual image outline positions, and a reference outline image generation circuit to generate a reference outline image of the predetermined region defined by the function, where a gray scale value of each pixel in the predetermined region is dependent on a distance from the center of a pixel concerned to the closest reference outline position in plural reference outline positions on a reference outline to be compared with the actual image outline.

Abstract: A Wien filter includes a cylindrical yoke, a plurality of magnetic poles arranged at intervals along an inner periphery of the yoke, the magnetic poles each joined at one end thereof to the yoke, a coil wound on each of the plurality of magnetic poles, and an electrode disposed at the other end of each of the plurality of magnetic poles, with an insulator between the electrode and the magnetic pole. The magnetic poles each has a recess at the other end thereof, and the insulator and the electrode may be disposed in the recess.

Abstract: According to an embodiment, an inspection apparatus includes: a stage; an illumination optical system; an imaging optical system including a sensor that detects a focal position; a detection circuit configured to detect a focal position signal of the light; a setting circuit configured to set a first focus offset value of a first region based on a result obtained by shifting, in an advancement direction of the stage, coordinate data of first focal position data generated based on a result obtained by optically scanning the first region; and a control circuit configured to control a height position of the stage based on the focal position signal and the first focus offset value.

Abstract: The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

Abstract: A cathode mechanism of an electron emission source includes a crystal that includes an upper part being columnar, truncated conical, or their combined shape, and having a first surface to emit thermoelectrons, and a lower part, integrated with the upper part, having a second surface substantially parallel to the first surface, and a diameter larger than the maximum diameter of the upper part, a holding part that is a column having, in order from the holding part upper side, different inner diameters of a first diameter and a second diameter larger than the first one, and that holds the crystal in the state where the crystal first surface is projecting from the upper surface, and the crystal second surface contacts the holding part inside the column, and a retaining part that retains the crystal, at the back of the crystal lower part, not to be separated from the holding part.

Abstract: A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.

Abstract: In one embodiment, an electron beam inspection apparatus includes an optical system irradiating a substrate with primary electron beams, a beam separator separating, from the primary electron beams, secondary electron beams emitted as a result of irradiating the substrate with the primary electron beams, a detector detecting the secondary electron beams separated, a movable stage on which the substrate is placed, a support base supporting the substrate on the stage, and an applying unit applying a first voltage to the substrate. The support base includes a plurality of support pins that support the substrate from below. The support pins each include a columnar insulator and a metal film disposed in the insulator. A second voltage is applied to the metal film.