Abstract: The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy.

Abstract: An imaging mechanism is configured to obtain an inspection image based on light for a sample. A control unit is configured to maintain a state in which the light does not continue to strike a position on the sample for a period from completion of obtainment of an inspection image of a first area to start of obtainment of an inspection image of a second area. The position is a position at which the obtainment of the inspection image of the first area is completed or the obtainment of the inspection image of the second area is started. The control unit starts maintaining the state in which the light does not continue to strike the position, after the obtainment of the inspection image of the first area is completed and then a state in which the comparison circuit cannot start comparison is maintained over a first period.

Abstract: In one embodiment, a writing method includes calculating irradiation times for each shot of individual beams of multiple charged particle beams, setting, based on the calculated irradiation times, an ON or OFF state of each individual beam at each irradiation step in a shot cycle comprising a plurality of irradiation steps, extracting a number of beams set in the ON state at a longest irradiation step in each shot with the multiple charged particle beams, determining, based on the extracted number of beams, whether to change the shot cycle, and sequentially applying, based on the determining, the beams corresponding to the irradiation times of the plurality of irradiation steps to a substrate placed on a stage to write a pattern on the substrate, while performing tracking control such that an irradiation region irradiated with the multiple charged particle beams follows movement of the stage.

Abstract: According to an embodiment, semiconductor manufacturing apparatus includes a chamber, a susceptor holding a wafer, a rotating body configured to rotate the susceptor about a predetermined central axis, a first radiation thermometer configured to measure a temperature at a first temperature measurement position of the wafer, a second radiation thermometer configured to measure a temperature at a second temperature measurement position of the wafer, a first heater for heating a central region of the wafer, a second heater for heating an outer region of the wafer, and a controller that controls power applied to each of the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and is shorter than 0.8 times a radius of the wafer.

Abstract: In one embodiment, a multiple charged-particle beam irradiation apparatus includes a correction map generation unit calculating, for each pixel, a beam modulation rate for the pixel and a beam modulation rate for at least one of pixels surrounding the pixel, based on an amount of displacement of a beam emitted toward the pixel and a position of a pattern placed within the pixel and generating a correction map in which modulation rates are defined, and an irradiation dose correction unit calculating, for each pixel, a corrected irradiation dose by adding a value obtained by multiplying the beam modulation rate for the pixel defined in the correction map by the beam irradiation dose for the pixel and a value obtained by multiplying the beam modulation rate for the at least one pixel by a beam irradiation dose for a pixel serving as an associated destination of the at least one pixel.

Abstract: According to one embodiment of the present invention, a mounting substrate is installed on a multi charged particle beam irradiation apparatus, and a blanking aperture array chip provided with blanking electrodes to perform blanking deflection on beams in a multi charged particle beam is mounted on the mounting substrate. The mounting substrate includes an opening through which the multi charged particle beam passes, a plurality of control circuits that supply a control signal to the blanking electrodes for each of a plurality of areas into which the blanking aperture array chip is divided, and grounds, each of which is provided for a corresponding one of the plurality of control circuits and configured to supply a ground electrical potential to the corresponding control circuit. The grounds corresponding to the control circuits are electrically separated from each other.

Abstract: An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step for calculating a dose for each mesh region using the pattern density, a step for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step for calculating a position shift amount of a writing position from the calculated charge amount, and a step for correcting an irradiation position of the charged particle beam using the position shift amount.

Abstract: In one embodiment, a multi-charged particle beam irradiation apparatus includes a plurality of blankers blanking-deflecting each beam in a multi-beam, a stopping aperture substrate blocking the beam blanking-deflected to achieve a beam-OFF state by the plurality of blankers, the stopping aperture substrate including an opening through which a beam in a beam-ON state passes, a front stage electrode disposed upstream of the stopping aperture substrate in a beam optical path, and a potential control circuit forming an electric field in a direction from the front stage electrode to the stopping aperture substrate. An inner diameter d of the front stage electrode is determined based on a distance r1 from a center of the opening to a position at which the blanking-deflected beam collides with the stopping aperture substrate, and a spread radius r2 of the multi-beam at a height position of an upper end of the front stage electrode.

Abstract: A drawing data examination method acquires coordinates representing the positions of a first control point group forming a B-spline curve; calculates a B-spline curve intersection ratio; converts the coordinates of the first control point group into the coordinates of a second control point group of a Bezier curve when the B-spline curve intersection ratio exceeds a threshold value, and determines whether the figure after the coordinate conversion has an intersection; and determines whether the figure of the drawing data has an intersection based on the first control point group when the B-spline curve intersection ratio is equal to or smaller than the threshold value, and converts the coordinates of the first control point group into the coordinates of the second control point group when the figure of the drawing data has an intersection, and determines whether the figure after the coordinate conversion has an intersection.

Abstract: A multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the beam on a substrate, n (n?3) correction lenses correcting an imaging state of the multi charged particle beam, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied. The electric field control electrode generates an electric field between the substrate and the electrode. The objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the beam. m (n?m?1) correction lenses of the n correction lenses are magnetic correction lenses placed in a lens magnetic field of the second objective lens. (n?m) correction lenses are placed upstream of the lens magnetic field of the second objective lens in the travel direction.

Abstract: In one embodiment, a blanking aperture array system includes a blanking aperture array substrate provided blankers corresponding to each beam of a multi beam, a first radiation shield, and a second radiation shield. A circuit section applying a voltage to the blankers is disposed closer to a peripheral edge than a cell section including the blankers. The first radiation shield includes a first plate covering over the circuit section, disposed on an upper surface of the blanking aperture array substrate, and extending from a peripheral edge of a first opening for passage of the multi beam. The second radiation shield covers under the circuit section, and includes a lower peripheral wall section that hangs down from a lower surface of the blanking aperture array substrate and surrounds the cell section, and a lower plate extending from a peripheral edge of a lower opening for passage of the multi beam.

Abstract: A method for adjusting a focus position of an inspection apparatus includes measuring, while varying a height position of a pattern forming surface of an evaluation substrate with thereon plural types of figure patterns, for each type of figure pattern, light amounts at front and back focus positions of a light transmitted through or reflected from the evaluation substrate irradiated with an inspection light, calculating an autofocus signal, for each type of figure pattern and for each height position of the pattern forming surface, by using the light amounts measured at the front and back focus positions, and specifying a value of an inspection autofocus signal such that a difference between autofocus signal values of plural type figure patterns calculated at the same height position of the pattern forming surface is equal to or less than a threshold value.

Abstract: The mark position is measured with a multi-beam with high accuracy. A multi charged particle beam writing method includes forming a multi-beam in which charged particle beams are arranged with a predetermined pitch, irradiating a mark with beams in an on-beam region while shifting irradiation positions of the charged particle beams by sequentially changing the on-beam region in which beams in a partial region of the multi-beam are set to ON, the mark being provided at a predetermined position and having a width greater than the predetermined pitch, detecting a reflected charged particle signal from the mark, and calculating a position of the mark, and adjusting the irradiation positions of the multi-beam based on the calculated position of the mark, and writing a pattern.

Abstract: In one embodiment, a multi charged particle beam writing method includes forming a multi charged particle beam with which a substrate serving as a writing target is irradiated, deflecting the multi charged particle beam to a position with a predetermined deflection offset added so that deflection voltages respectively applied to a plurality of electrodes of an electrostatic positioning deflector does not include a state where all the deflection voltages are zero, and irradiating the substrate with the multi charged particle beam. A positive common voltage is added to the deflection voltages which are applied to the respective electrodes of the electrostatic positioning deflector.

Abstract: According to one aspect of the present invention, a pattern inspection apparatus includes a parameter range setting circuit configured to set a range of a reference image generation parameter according to a coincidence degree with a past inspection condition parameter, a filter function generation circuit configured to generate a plurality of filter function candidates, using values in a set range of the reference image generation parameter, a determination circuit configured to determine a filter function for generating a reference image in the plurality of filter function candidates generated, a reference image generation circuit configured to generate a reference image by using the filter function determined, and a comparison circuit configured to compare the optical image with the reference image, wherein the reference image generation parameter is at least one of a resize amount and a corner rounding amount.

Abstract: According to one aspect of the present invention, a multi-charged particle beam writing apparatus, includes: a blanking aperture array mechanism having a blanking aperture array chip having a plurality of blankers for individually switching incident multi-charged particle beams between a beam ON state and a beam OFF state by beam deflection and a mounting board configured to support the blanking aperture array chip, a power supply plane for supplying power to the blanking aperture array chip being formed in the mounting board; a limiting aperture substrate configured to block a beam in the beam OFF state among the multi-charged particle beams having passed through the blanking aperture array mechanism; a current acquisition circuit configured to acquire a current flowing through the power supply plane; and one or more stages of deflectors configured to deflect the multi-charged particle beams having passed through the blanking aperture array mechanism.

Abstract: A chip-stacked device includes a first chip including a first substrate including a first face, a first conductive film provided in an island form over the first face and electrically connected to a signal line, and a second conductive film provided apart from the first conductive film over the first face and connected to the ground line; a second chip; a first bonding portion covering the first conductive film; and a second bonding portion apart from the first conductive film and the first bonding portion, the second bonding portion located over the second conductive film. The first chip and the second chip are bonded to each other via the first bonding portion and the second bonding portion.

Abstract: A first chip includes a first substrate which includes a first outer peripheral surface and a first array surface surrounded by the first outer peripheral surface, and a first wiring layer provided on the first substrate. A second chip including a second substrate which includes a second outer peripheral surface facing the first outer peripheral surface and a second array surface facing the first array surface, which is surrounded by the second outer peripheral surface, and a second wiring layer provided on the second array surface. A plurality of connection portions is provided between the first array surface and the second array surface. The plurality of connection portions is configured to electrically connect the first wiring layer and the second wiring layer. The second substrate includes a recessed portion provided in the second outer peripheral surface.