Abstract: According to an embodiment, a defect inspection method is performed with a defect inspection apparatus. The defect inspection apparatus is adapted to irradiate a first sample with illumination light to acquire a first sample image, and compare the first sample image to a reference image to inspect a defect. The defect inspection method includes generating the reference image, acquiring the first sample image, setting a defect detection condition using an index based on a result of defect inspection of a second sample different from the first sample, and discriminating a nuisance from a result of comparison between the reference image and the first sample image based on the defect detection condition.

Abstract: In one embodiment, a writing data generating method is for generating writing data used in a charged-particle beam writing apparatus. The method includes generating, with respect to a graphical pattern included in design data, a plurality of divided curves by dividing a curve surrounding the graphical pattern such that the divided curves are smaller than or equal to a predetermined size, and calculating a plurality of control points for representation of each of the divided curves as a parametric curve, calculating a feature amount of a curved portion surrounded by the parametric curve and a line segment connecting a start point and an end point of the parametric curve out of the plurality of control points, and generating the writing data including positional information of the plurality of control points and the feature amount of the curved portion.

Abstract: A pattern inspection apparatus includes a secondary electron image acquisition mechanism to include a deflector deflecting multiple primary electron beams and a detector detecting multiple secondary electron beams, and acquire a secondary electron image corresponding to each of the multiple primary electron beams by scanning a target object with a pattern thereon with the multiple primary electron beams by the deflector, and detecting the multiple secondary electron beams from the target object by the detector, a storage device to store individual correction kernels each generated for individually adjusting a secondary electron image corresponding to each primary electron beam concerning a reference pattern to be commensurate with a reference blurred image, and a correction circuit to correct, by correspondingly using the individual correction kernel, the secondary electron image corresponding to each primary electron beam acquired from the inspection target object.

Abstract: A multiple secondary electron beam alignment method includes scanning a plurality of first detection elements of a multi-detector, which are arrayed in a grid, with multiple secondary electron beams emitted from a surface of a target object on a stage, detecting a plurality of beams including a corner beam located at a corner in the multiple secondary electron beams by the multi-detector, calculating a positional relationship between the plurality of beams including the corner beam and a plurality of second detection elements, which have detected the plurality of beams including the corner beam, in the plurality of first detection elements, calculating, based on the positional relationship, a shift amount for aligning the plurality of first detection elements with the multiple secondary electron beams, and moving, using the shift amount, the multi-detector relatively to the multiple secondary electron beams.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Abstract: Method for searching a hole pattern in image includes extracting, from an image where a hole pattern is formed, plural outline position candidates serving as candidates for plural positions where an outline of the hole pattern passes, generating, for each pixel in a region including the plural outline position candidates, a distance map which defines, for each of plural directions, a distance from each of the plural outline position candidates to each of pixels arrayed in a target direction of the plural directions, extracting a candidate for a center pixel of the hole pattern by using the distance map generated for each direction, and searching, in the plural outline position candidates, a group of outline position candidates which satisfies a predetermined condition in the case of using the candidate for the center pixel as a starting point, as plural outline positions where the outline of the hole pattern passes.

Abstract: An electromagnetic lens includes a coil; a yoke including an upper wall on the upstream side along the advancing direction of a primary electron beam passing, outer and inner peripheral walls, and a lower wall where a gap is formed on the downstream side along the primary-electron-beam advancing direction or an inclined wall where a gap is formed on the downstream side along the primary-electron-beam advancing direction, letting the primary electron beam pass through a space surrounded by the inner peripheral wall, and surrounding the coil by the upper wall, the outer and inner peripheral walls, and the lower wall or the inclined wall; and a cover contacting and covering an end surface of the yoke on the downstream side along the primary-electron-beam advancing direction, the end surface including a corner portion on the inner peripheral side, wherein the cover corner portion is formed having a curved surface.

Abstract: A multiple-beam image acquisition apparatus includes a stage to mount thereon a target object, a mark member, arranged on the stage, to include a base body having at least a surface made from the first material, plural isolated patterns, formed on the base body, having the same positional relationship as plural irradiation positions, flush in height with the surface of the target object, of plural beams having been determined previously in multiple primary electron beams, and being made from a material different from the first material, and an alignment mark, an electron optical system to irradiate the mark member with the multiple primary electron beams in the state where alignment of the multiple primary electron beams has been performed using the alignment mark, and a multi-detector to detect multiple secondary electron beams emitted from the mark member because the mark member is irradiated with the multiple primary electron beams.

Abstract: A multiple charged particle beam writing method includes emitting multiple charged particle beams, and performing writing with the multiple charged particle beams, during a movement of a stage having a target object thereon in a reverse direction to a movement direction of the writing, to at least two stripe regions in a plurality of stripe regions aligned, on the target object, partially overlapping with each other in the first direction being linearly independent with respect to the movement direction of the writing, while repeatedly switching an irradiation region, in the first direction, by a deflection amount having a width larger than a beam pitch size of the multiple charged particle beams, and applying irradiation with the multiple charged particle beams at each time of the switching the irradiation region.

Abstract: In one embodiment, a multiple charged particle beam writing apparatus includes an emitter configured to emit multiple-beam of charged particles, and an irradiation time controller configured to control an irradiation time of each of a plurality of beams included in the multiple-beam. The plurality of beams are classified into a plurality of groups including a first group and a second group. The irradiation time controller controls beams in the first group to be ON simultaneously at a first timing, and to be OFF after lapse of an irradiation time of each beam, and controls beams in the second group to be ON based on the irradiation time of each beam, and to be OFF simultaneously at a second timing.

Abstract: In one embodiment, a method of adjusting charged particle beam writing apparatus includes transporting a substrate before writing received via an interface from an outside to a writing chamber and placing the substrate on a stage, irradiating the substrate on the stage with a charged particle beam to write a pattern, and transporting the substrate after writing from the writing chamber to the outside via the interface. At least part of adjustment work for devices in the charged particle beam writing apparatus is performed during transport of the substrate between the interface and the writing chamber.

Abstract: A multiple electron beam image acquisition method includes performing scanning with a representative secondary electron beam emitted, based on temporary secondary electron beam deflection conditions, for each of plural positions in a primary electron beam deflection range of a representative primary electron beam, acquiring plural coordinates corresponding to the plural positions, based on detected images of the representative secondary electron beam, each detected at any one of the plural positions in the primary electron beam deflection range of the representative primary electron beam, and calculating, using the plural coordinates acquired, secondary electron beam deflection conditions to cancel movement of the representative secondary electron beam due to movement of the representative primary electron beam in the primary electron beam deflection range of the representative primary electron beam and to fix the irradiation position of the representative secondary electron beam to the predetermined detectio

Abstract: A method for detecting a discharge site for a charged particle beam emitting apparatus includes switchable first and second modes. The first mode enables a beam of charged particles to be deflected by applying voltages to electrodes. The second mode enables acquisition of data items indicative of potential of each of the electrodes while the beam is being emitted without applying the voltages. The method includes, in the second mode, detecting an occurrence of a discharge when a fluctuation in potential indicated by data items relating to one of the electrodes exceeds a predetermined threshold value; and detecting a site corresponding to the electrode, as a site having an occurrence of the discharge.

Abstract: According to one aspect of the present invention, a multi-electron beam image acquisition apparatus, includes: a plurality of first electrostatic deflectors in two stages, each of the first electrostatic deflectors having a plurality of electrodes of quadrupoles or more, configured to deflect multiple primary electron beams collectively to scan a substrate with the multiple primary electron beams; a potential application circuit configured to apply a retarding potential to the substrate; a first determination circuit configured to determine a first phase difference of deflection directions for the plurality of first electrostatic deflectors so as to reduce aberration caused by deflection of the multiple primary electron beams according to a magnitude of the retarding potential; and a deflection control circuit configured to apply an individual potential according to the first phase difference of the deflection directions to each electrode of the plurality of first electrostatic deflectors.

Abstract: In one embodiment, a multi-beam writing method is for dividing a writing region of a substrate into multiple stripe regions, and writing each stripe region with a predetermined within-stripe multiplicity of N, where N is an integer greater than 1. The multi-beam writing method includes generating M different types of segments that define a shot order for multiple pixels belonging to each of multiple cells into which the stripe region is divided, the M being an integer greater than 1, irradiating the multiple pixels in the cell with a first individual beam using (m?1)th segment, where m is an integer such that 2?m?M, then irradiating the multiple pixels in the cell with a second individual beam different from the first individual beam using mth segment, and writing all pixels in each cell with the multiplicity of N by repeating irradiation sequentially using the M types of segments.

Abstract: Provided is an inspection apparatus including: an irradiation source irradiating an electron beam to a pattern of an inspection target object, the inspection target object having a first surface and a second surface having the pattern; a first voltage application circuit applying a first voltage to the first surface; a second voltage application circuit applying a second voltage to the second surface; and a detector for acquiring an inspection image generated from the pattern by irradiating the electron beam, wherein |Vacc?VL|=|V2|<|V1| is satisfied, when an acceleration voltage of an electron included in the electron beam is Vacc, an incident voltage of the electron reaching the second surface is denoted by VL, the first voltage is denoted by V1, and the second voltage is denoted by V2.