Abstract: A method for estimating the cathode lifetime of an electron gun includes recording the change amount, per unit temperature increase of the cathode of an electron gun which emits an electron beam, with respect to a parameter value relating to the electron beam, to be recorded in relation to the usage time of the cathode, and estimating the lifetime of the cathode by one of estimating a time obtained by adding a predetermined time to a time at which the change amount recorded a plurality of times becomes lower than a prescribed value as the lifetime of the cathode, and estimating, using an approximate line obtained by approximating the change amount recorded a plurality of times, a time at which the change amount becomes zero as the lifetime of the cathode, and outputting the estimated lifetime.

Abstract: In one embodiment, an evaluation pattern formation method includes a step of irradiating a charged particle beam onto a sample to write a plurality of first patterns having different pattern densities, and a step of writing a plurality of second patterns having different pattern densities so that, when combined with at least some of the plurality of first patterns, each pattern achieves the same pattern density, thereby forming a plurality of evaluation patterns with the same pattern density.

Abstract: In one embodiment, a multi-charged particle beam irradiation apparatus includes a blanking aperture array substrate having a plurality of blankers that perform blanking deflection on each beam of the multi-beam, an illumination lens that forms a crossover by focusing the multi-beam which passes through the blanking aperture array substrate, a stopping aperture substrate disposed at a position of the crossover and configured to block a beam which is deflected to be in a beam-OFF state, a stage on which a substrate to be irradiated with a beam passing through the stopping aperture substrate is placed, an electrostatic deflector disposed in proximity to the stopping aperture substrate, between the blanking aperture array substrate and the stopping aperture substrate, and a voltage control circuit configured to form an electric field perpendicular to a trajectory central axis of the multi-beam by applying a predetermined voltage to the electrostatic deflector.

Abstract: In one embodiment, a multi-charged particle beam writing method includes a step of setting, in a writing region of a sample, a plurality of writing grids obtained by shifting a plurality of ideal grids by a shift amount with anisotropy, the plurality of ideal grids being arranged in a lattice pattern with an equal pitch, and a step of writing a pattern on the sample by irradiating the plurality of writing grids with a multi-beam.

Abstract: In one embodiment, a charged particle beam writing method calculates an irradiation amount of a charged particle beam for writing a pattern on a substrate with a target mesh size based on design data. The writing region is virtually divided into first mesh regions using a mesh size larger than the target size, and an area density of the pattern in each first mesh region is calculated. A first irradiation amount of individual beams, defined at grid intersections of a control grid in the writing region, is then calculated using the area density. A second irradiation amount for the individual beams, when the writing region is divided with the target mesh size, is obtained from the first irradiation amount using a conversion formula including a reduction ratio of the target mesh size with respect to the predetermined mesh size.

Abstract: The present invention efficiently and accurately diagnoses abnormalities of blankers. An abnormality diagnosis method for a blanking aperture array substrate according to the present embodiment includes grouping the plurality of individual blankers into a plurality of groups, measuring blanking performance of the individual blankers for each group, and iteratively subdividing any group exhibiting abnormal blanking performance into subgroups to identify an individual blanker having abnormal blanking performance.

Abstract: A multi-charged-particle-beam writing method includes calculating a magnification correction amount of an acquired beam array shape by using a first coefficient indicating a displacement component which deviates in a first direction in proportion to a design coordinate in the first direction of the acquired beam array shape, where the first direction is parallel to a direction of writing performed while continuously moving a stage with a target object thereon; calculating a rotation correction amount of the acquired beam array shape by using a second coefficient indicating a displacement component which deviates in a second direction, being orthogonal to the first direction, in proportion to a design coordinate in the first direction of the acquired beam array shape; and calculating a modulation dose amount for each unit region of a plurality of unit regions, based on at least one of a third coefficient, and a fourth coefficient.

Abstract: In one embodiment, a charged particle beam writing apparatus includes a charged particle source generating and emitting a beam, a blanker controlling ON/OFF of the beam, a stopping aperture substrate having a first opening through which the beam, when controlled to be ON by the blanker, passes toward a substrate, a scattering section through which the beam transmits while being scattered when deflected by the blanker to be OFF, and an absorbing member that absorbs the beam having transmitted through the scattering section.

Abstract: According to one aspect of the present invention, a multi-charged particle beam writing method includes assigning, to an irradiation unit region assigned one group of a plurality of groups in a plurality of irradiation unit regions, at least one sub shot which has been preset according to either one of an irradiation time set for an irradiation unit region concerned and a value calculated based on the irradiation time, in a plurality of sub shots each having one of a plurality of sub irradiation time obtained by dividing a maximum irradiation time for one shot, and assigning, to an irradiation unit region assigned another group in the plurality of groups, at least one sub shot which includes a sub shot other than the at least one sub shot having been set for the irradiation unit region assigned the one group in the same pixel-set.

Abstract: The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy.

Abstract: An imaging mechanism is configured to obtain an inspection image based on light for a sample. A control unit is configured to maintain a state in which the light does not continue to strike a position on the sample for a period from completion of obtainment of an inspection image of a first area to start of obtainment of an inspection image of a second area. The position is a position at which the obtainment of the inspection image of the first area is completed or the obtainment of the inspection image of the second area is started. The control unit starts maintaining the state in which the light does not continue to strike the position, after the obtainment of the inspection image of the first area is completed and then a state in which the comparison circuit cannot start comparison is maintained over a first period.

Abstract: In one embodiment, a writing method includes calculating irradiation times for each shot of individual beams of multiple charged particle beams, setting, based on the calculated irradiation times, an ON or OFF state of each individual beam at each irradiation step in a shot cycle comprising a plurality of irradiation steps, extracting a number of beams set in the ON state at a longest irradiation step in each shot with the multiple charged particle beams, determining, based on the extracted number of beams, whether to change the shot cycle, and sequentially applying, based on the determining, the beams corresponding to the irradiation times of the plurality of irradiation steps to a substrate placed on a stage to write a pattern on the substrate, while performing tracking control such that an irradiation region irradiated with the multiple charged particle beams follows movement of the stage.

Abstract: According to an embodiment, semiconductor manufacturing apparatus includes a chamber, a susceptor holding a wafer, a rotating body configured to rotate the susceptor about a predetermined central axis, a first radiation thermometer configured to measure a temperature at a first temperature measurement position of the wafer, a second radiation thermometer configured to measure a temperature at a second temperature measurement position of the wafer, a first heater for heating a central region of the wafer, a second heater for heating an outer region of the wafer, and a controller that controls power applied to each of the first heater and the second heater. A second distance from the central axis to the second temperature measurement position is longer than a first distance from the central axis to the first temperature measurement position and is shorter than 0.8 times a radius of the wafer.

Abstract: In one embodiment, a multiple charged-particle beam irradiation apparatus includes a correction map generation unit calculating, for each pixel, a beam modulation rate for the pixel and a beam modulation rate for at least one of pixels surrounding the pixel, based on an amount of displacement of a beam emitted toward the pixel and a position of a pattern placed within the pixel and generating a correction map in which modulation rates are defined, and an irradiation dose correction unit calculating, for each pixel, a corrected irradiation dose by adding a value obtained by multiplying the beam modulation rate for the pixel defined in the correction map by the beam irradiation dose for the pixel and a value obtained by multiplying the beam modulation rate for the at least one pixel by a beam irradiation dose for a pixel serving as an associated destination of the at least one pixel.

Abstract: According to one embodiment of the present invention, a mounting substrate is installed on a multi charged particle beam irradiation apparatus, and a blanking aperture array chip provided with blanking electrodes to perform blanking deflection on beams in a multi charged particle beam is mounted on the mounting substrate. The mounting substrate includes an opening through which the multi charged particle beam passes, a plurality of control circuits that supply a control signal to the blanking electrodes for each of a plurality of areas into which the blanking aperture array chip is divided, and grounds, each of which is provided for a corresponding one of the plurality of control circuits and configured to supply a ground electrical potential to the corresponding control circuit. The grounds corresponding to the control circuits are electrically separated from each other.

Abstract: An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step for calculating a dose for each mesh region using the pattern density, a step for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step for calculating a position shift amount of a writing position from the calculated charge amount, and a step for correcting an irradiation position of the charged particle beam using the position shift amount.

Abstract: In one embodiment, a multi-charged particle beam irradiation apparatus includes a plurality of blankers blanking-deflecting each beam in a multi-beam, a stopping aperture substrate blocking the beam blanking-deflected to achieve a beam-OFF state by the plurality of blankers, the stopping aperture substrate including an opening through which a beam in a beam-ON state passes, a front stage electrode disposed upstream of the stopping aperture substrate in a beam optical path, and a potential control circuit forming an electric field in a direction from the front stage electrode to the stopping aperture substrate. An inner diameter d of the front stage electrode is determined based on a distance r1 from a center of the opening to a position at which the blanking-deflected beam collides with the stopping aperture substrate, and a spread radius r2 of the multi-beam at a height position of an upper end of the front stage electrode.

Abstract: A drawing data examination method acquires coordinates representing the positions of a first control point group forming a B-spline curve; calculates a B-spline curve intersection ratio; converts the coordinates of the first control point group into the coordinates of a second control point group of a Bezier curve when the B-spline curve intersection ratio exceeds a threshold value, and determines whether the figure after the coordinate conversion has an intersection; and determines whether the figure of the drawing data has an intersection based on the first control point group when the B-spline curve intersection ratio is equal to or smaller than the threshold value, and converts the coordinates of the first control point group into the coordinates of the second control point group when the figure of the drawing data has an intersection, and determines whether the figure after the coordinate conversion has an intersection.

Abstract: A multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the beam on a substrate, n (n?3) correction lenses correcting an imaging state of the multi charged particle beam, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied. The electric field control electrode generates an electric field between the substrate and the electrode. The objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the beam. m (n?m?1) correction lenses of the n correction lenses are magnetic correction lenses placed in a lens magnetic field of the second objective lens. (n?m) correction lenses are placed upstream of the lens magnetic field of the second objective lens in the travel direction.