Abstract: Method, apparatus, and article of manufacture for modeling the biological effects of a molecule are disclosed. A machine learning application may be configured to process a set of training examples regarding a biological property of interest. Once trained, the machine learning application may be configured to generate a prediction regarding a property of interest for a test molecule. Embodiments of the invention provide a meta-model configured to generate a biological effect prediction for a molecule based on the predictions generated for the test molecule by a plurality of molecular property models.

Abstract: Methods and articles of manufacture for modeling molecular properties using data regarding the partial orderings of compound properties, or by considering measurements of compound properties in terms of partial orderings are disclosed. One embodiment provides for constructing such partial orderings from data that is not already in an ordered form by processing training data to produce a partial ordering of the compounds with respect to a property of interest. Another embodiment of the invention may process the modified training data to construct a model that predicts the property of interest for arbitrary compounds.

Abstract: A method and apparatus for analyzing molecular systems with reconfigurable special-purpose hardware is provided. An entire molecular mechanics calculation is implemented on a programmable logic device (PLD) integrated circuit (IC) (“single chip”). This single IC accelerator is achieved by run-time reprogramming of the PLD to handle different terms in the molecular mechanics calculation.

Abstract: A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O, and S. A random-accessible, non-volatile memory built using the This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical. properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O and S. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb(.sub.1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w , where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell.

Abstract: An apparatus for cutting an elongated workpiece of indefinite length into articles of predetermined length, in continuous fashion. The apparatus includes drive rollers to feed the workpiece, horizontal and vertical straightener rollers, and a movable carriage assembly which moves in a parallel path of travel to the workpiece. The free end of the workpiece contacts the carriage assembly and imparts movement to the assembly. The carriage assembly includes a cutter assembly for severing the workpiece, a stripper assembly for breaking the article from the workpiece, and a kick-out for sending the article to a storage bin.