Patents Assigned to NuRAM Technology, Inc.
  • Multilevel memory cell sense amplifier system and sensing methods
    Patent number: 6034885
    Abstract: A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.
    Type: Grant
    Filed: January 11, 1999
    Date of Patent: March 7, 2000
    Assignee: NuRam Technology, Inc.
    Inventor: John Y. Chan
  • Multilevel memory cell sense amplifier system and sensing methods
    Patent number: 5859794
    Abstract: A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.
    Type: Grant
    Filed: June 13, 1997
    Date of Patent: January 12, 1999
    Assignee: NuRam Technology, Inc.
    Inventor: John Y. Chan
  • Multilevel memory cell sense amplifier system
    Patent number: 5684736
    Abstract: A dynamic random access memory device stores two bits of digital data in each memory cell. Two sense amplifiers are provided to sense and reproduce any of the four binary values 11, 10, 01, 00 representing a strong one, a weak one, a weak zero and a strong zero, respectively, capable of being stored in each cell. The signal read out of a memory cell is restored to the memory cell by a feedback circuit which utilizes the outputs of the sense amplifiers. Thus the proper charge is replaced on the selected storage capacitor in the memory cell.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: November 4, 1997
    Assignee: NuRAM Technology, Inc.
    Inventor: John Y. Chan