Abstract: A piston having a head includes a circumferential compression ring groove having a top surface, a bottom surface and an inset rear wall extending between the top surface and the bottom surface, wherein a confined area of the compression ring groove is hardened.

Abstract: A prism includes a plurality of internal surfaces that reflect a beam incident on the prism.

Abstract: A method (and structure) of manufacturing high power laser diode array modules provides multi kilowatts of power for a semiconductor-based laser. The method also provides an array module having lower flow requirements. The array module provides a controlled, closed environment for the arrays to operate within, as well as a back reflection shield behind the arrays, which yields protection between the array and the array module housing. The structure may include two different array module configurations, the first being one stackable array of one hundred and fifty laser diode bar packages, which includes a high-flow, low-pressure drop heatsink providing a large plenum size for the array, reducing turbulent flow and lowering the required pressure for the array. The second configuration is a multi-stringed array configuration, providing multi kilowatts of power within a shoebox-sized footprint, incorporating the high-flow, low-pressure drop end caps, providing smaller flow restrictions.

Abstract: A method (and system) of coherently combining a plurality of diodes in an external cavity laser diode system includes adjusting the phase of the plurality of diodes to correct phase errors, wherein the adjusting the phase includes intercavity phase adjustment. The laser diode external cavity system includes an adjuster for intercavity phase adjustment.

Abstract: A semiconductor laser device includes a tailored index single mode power amplifier. A high-power laser system can be produced by connecting several of the tailored index single mode power amplifiers in parallel. In an exemplary case, a phase shifting device can be optically coupled to each of the tailored index single mode power amplifiers; the phase shifting devices can be controlled to ensure that the laser beams output by the tailored index single mode power amplifiers are both phase aligned and wavefront matched.

Abstract: A semiconductor laser device includes a tailored index single mode power amplifier. A high-power laser system can be produced by connecting several of the tailored index single mode power amplifiers in parallel. In an exemplary case, a phase shifting device can be optically coupled to each of the tailored index single mode power amplifiers; the phase shifting devices can be controlled to ensure that the laser beams output by the tailored index single mode power amplifiers are both phase aligned and wavefront matched.

Abstract: A semiconductor laser device includes a tailored index single mode power amplifier. A high-power laser system can be produced by connecting several of the tailored index single mode power amplifiers in parallel. In an exemplary case, a phase shifting device can be optically coupled to each of the tailored index single mode power amplifiers; the phase shifting devices can be controlled to ensure that the laser beams output by the tailored index single mode power amplifiers are both phase aligned and wavefront matched.

Abstract: A semiconductor quantum well laser having separate lateral confinement of injected carriers and the optical mode. A ridge waveguide is used to confine the optical mode. A buried heterostructure confines injected carriers. A preferred embodiment laser of the invention is a layered semiconductor structure including optical confinement layers. A buried heterojunction quantum well within the optical confinement layers is dimensioned and arranged to confine injected carriers during laser operation. A ridge waveguide outside the optical confinement layers is dimensioned and arranged with respect to the buried heterojunction to confine an optical mode during laser operation. An index step created by the buried heterojunction is substantially removed from the optical mode.

Abstract: A laser diode system permitting indirect measurement of optical power includes a laser diode which emits usable light from a front facet and spontaneously emits stray light substantially proportional to the usable light from another facet; and a light pipe disposed proximate to the laser diode which collects and waveguides only the stray light to thereby generate a stray light beam providing an indication of optical power.