Abstract: A laterally-diffused metal-oxide-semiconductor (LDMOS) transistor includes a first well of a first conductivity type, a source of a second conductivity type formed in the first well, a drift region of the second conductivity type formed in the first well, and a second well of the second conductivity type formed in the first well and below the drift region. The drift region is separated from the source. The LDMOS transistor further includes a drain of the second conductivity type formed in the drift region, and includes a concentrator of the second conductivity type formed in the drift region and separated from the drain. A distance between the concentrator and the source is less than a distance between the drain and the source.