Patents Assigned to Oakvale Technology
  • Patent number: 6949423
    Abstract: With directly biasing drain to source in a floating-gate N-MOSFET, a new MOSFET-fused nonvolatile ROM cell (MOFROM) is provided by tunneling-induced punch through of the drain junction to the source. The MOFROM is completely compatible with the mainstream standard CMOS process. The standard MOSFET presents an “OFF” state before the burning and an “ON” state with a stable low-resistance path after the burning.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: September 27, 2005
    Assignee: Oakvale Technology
    Inventors: Pingxi Ma, Daniel Fu