Abstract: The present invention relates to solar cells and discloses a difluoro benzotriazolyl solar cell material and preparation method and use thereof. The solar cell material is represented by formula (I), wherein both R1 and R2, are C1 to C20 alkyl, and n is an integer from 10 to 50. In the difluoro benzotriazolyl solar cell material, since the 1,2,3-benzotriazole solar cell material contains two fluorine atoms, the HOMO energy level is reduced by 0.11 eV, while the fluorine-substituted 1,2,3-benzotriazole has two imido groups with electron-withdrawing ability; the fluorine-substituted 1,2,3-benzotriazole is a heterocyclic compound with strong electron-withdrawing ability, and an alkyl chain can be easily introduced to the N-position of the N—H bond of the benzotriazole. The functional group of the alkyl chain can improve the solar energy conversion efficiency, thus solving the low efficiency problem of solar cells made of the solar cell material.

Abstract: An organic electroluminescence device comprises the following structure: a conductive base (110), a hole injection layer (120), a light emission layer (140), and a cathode layer (170) are laminated in sequence. The material of the hole injection layer (120) comprises a conductive polymer and an azo initiator. A nano-network structure is provided on the connecting surface of the hole injection layer (120) and the light emission layer (140). After being heated to a higher temperature, the azo initiator can be decompounded to release N2, thus the nano-network structure is formed on the surface of the hole injection layer (120). The nano-network structure can efficiently increase the contacting area of the hole injection layer (120) and the adjacent layer. The injection efficiency of the hole is improved. A manufacturing method of the organic electroluminescence device is also provided.

Abstract: A photovoltaic polymer material, preparation method and use thereof are provided. Said photovoltaic polymer material has the following formula (I). The photovoltaic polymer material has the thiophene-phenylene-thiophene (TPT) derivative as the basic structure unit, and by the introduction of D1 and D2 structures to modify the TPT, and the photovoltaic polymer material has the characters of higher hole mobility, narrower band gap and broader absorption region.

Abstract: A field emission light source device, comprising: cathode plate comprising substrate and cathode conductive layer disposed on surface of substrate, and anode plate comprising base formed from transparent ceramic material and anode conductive layer disposed on one surface of base, and insulating support member by which cathode plate and anode plate are integrally fixed, and vacuum-tight chamber formed with anode plate, cathode plate and insulating support member; anode conductive layer and the cathode plate are disposed opposite each other. Because of advantages of good electrical conductivity, high light transmittance, stable electron-impact resistance performance and uniform luminescence, using transparent ceramic as the base of the anode plate in the field emission light source device can increase electron beam excitation efficiency effectively, increase light extraction efficiency of the field emission light source device, and finally increase its luminous efficiency.

Abstract: A fluorene copolymer, method for preparation thereof, and use thereof are provided. Said fluorene copolymer comprises copolymer represented by formula (I), wherein R1-R2, R5-R8 are selected from H or C1-C20 alkyl, R3-R4 are selected from H, C1-C20 alkyl, C1-C20 alkoxyl, phenyl or phenoxyl, x+y=1, x?0, y?0; n is an integer of 1 to 200, Ar1 is thiophene unit-containing group. On account of thiophene unit and thienopyrazine unit, the fluorene copolymer has wide spectrum response range and favorable stability.

Abstract: Borate luminous material is provided, wherein, comprises the compound of following structural formula: M2(Re1-xLnx)2B2O7, wherein x is in a range of 0<x?0.5, M is alkali metal element, Ln is at least one of Tm, Tb, Eu, Sm, Pr, Dy, Ce and Bi, Re is selected from one or more element of Y, Gd, Sc, Lu and La. The preparation method of borate luminous material also is provided. The borate luminous material has the advantages of good stability, high luminescence efficiency and high color purity.

Abstract: A green luminescent material of terbium doped gadolinium borate is provided. The luminescent material has a formula of M3Gd1-xTbx(BO3)3, wherein, M is alkaline earth metal element and x is 0.005-0.5. The method for preparing the luminescent material comprises the following steps: selecting the source compounds of alkaline earth metal ion, boric acid radical ion (BO33?), Gd3+ and Tb3+ by the stoichiometric ratio, wherein, the stoichiometric ratio is the molar ratio of the corresponding element in the formula of M3Gd1-xTbx(BO3)3, and the source compound of BO33? is over 10%-30% by the molar ratio; mixing; pre-treatment by sintering; cooling; grinding; calcination; and cooling to obtain the luminescent material.

Abstract: A titanium doped ternary system silicate film is provided, wherein the titanium doped ternary system silicate film has the general formula, of Ca2-xMgSi2O7:xTi4+, where x has a value of 0.00017˜0.0256. The preparation method of the titanium doped tenuity system silicate film and the application of the titanium doped ternary system ,silicate film obtained by the method in field emission de ices cathode my tubes and/or electroluminescent devices are also provided.

Abstract: A preparation method of the fluorescent powder layer (108, 208) is provided.

Abstract: Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof are provided, said method for manufacturing cerium doped magnesium barium tungstate luminescent thin film comprises the following steps: mixing MgO, BaO, WO3 and Ce2O3, sintering for forming sputtering target, forming the precursor of cerium doped magnesium barium tungstate luminescent thin film by magnetron sputtering, annealing the precursor of cerium doped magnesium barium tungstate luminescent thin film, and then forming cerium doped magnesium barium tungstate luminescent thin film. Said cerium doped magnesium barium tungstate luminescent thin film exhibits high luminescence efficiency and high light emitting peaks in red and blue regions. Said method presents the advantages of simplified operation, less cost, and suitable for industrial preparation.

Abstract: A heterocyclic quinoid thiophene organic photoelectric material, which comprises a compound represented by formula (1), in which R1, R2, R5 and R6, which may be identical or different, are H or C1-C20 alkyl or alkoxyl; R3 and R4, which may be identical or different, are C1-C20 alkyl or alkoxyl; a and b, which may be identical or different, are integer of 1-12; X is Si or C. A preparation method of said heterocyclic quinoid thiophene organic photoelectric material and the use thereof are also disclosed.

Abstract: An organic electroluminescent compound containing Iridium, preparation method thereof and an organic electroluminescent device are disclosed. The compound is represented by the structure (2), wherein, R is C1˜C4 alkyl. The structure of the compound contains bipyridine ligand, also carries alkoxy group and fluorine atom, which improves its carrier injection and transfer ability, and increases its internal quantum efficiency and electroluminescent efficiency. Furthermore, the compound uses strong field ligand 2-pyridine carboxylic acid as assistant ligand, which causes an effective blue shift of its emission spectrum and increases light-emitting efficiency of blue light phosphorescence greatly.

Abstract: A top-emitting flexible organic light emission diode device and preparation method thereof are provided. The device involves overlapping a substrate, an anode layer, a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, an electron injection layer and a cathode layer sequentially. The material of the cathode is scythe-silver alloy or ytterbium-silver alloy. The method for preparing the device comprises the following steps: cleaning and drying the substrate; depositing the anode layer on the surface of the substrate; overlapped depositing the hole injection layer, the hole transport layer, the emission layer, the electron transport layer and the electron injection layer sequentially on the surface of the anode layer; depositing the cathode layer on the surface of the electron injection layer to obtain the device.

Abstract: The present disclosure relates to the field of solar cells. An amine-containing difluoro benzotriazolyl polymer, preparation method, and use thereof are provided; the polymer has a structure as represented by formula (I), both R1 and R2 are alkyls from C1 to C20, n is an integer from 10 to 50. In the polymer of the present disclosure, because the 1, 2, 3-benzotriazole solar cell material contains two fluorine atoms, the HOMO energy level is reduced by 0.11 eV, the fluorine-substituted 1, 2, 3-benzotriazole has two imido groups with strong electron-withdrawing property; the 1, 2, 3-benzotriazole is a heterocyclic compound with strong electron-withdrawing property, and an alkyl chain can be easily introduced to the N-position of the N—H bond of the benzotriazole; the functional group of the alkyl chain can improve solar energy conversion efficiency, thus solving the low efficiency problem of the solar cell made from the solar cell material.

Abstract: Quinoid thiophene organic photoelectric material with formula (1), method for its preparation and application thereof are provided, wherein R1, R2, R3, R4, R5 and R6, which are identical or different, represent H, C1˜C30 alkyl or alkoxy, m and n, which are identical or different, represent integers between 1 and 20. The quinoid thiophene organic photoelectric material with formula (1) has wide spectral response, good thermal stability and environmental stability.

Abstract: The present invention relates to ZnO green luminescent material and its preparation. The ZnO green luminescent material is prepared by doping a trivalent rare earth ion compound and a Li compound into zinc oxide material. The method comprises the following steps: (1) weighing raw material in the stoichiometric ratio of formula ZnO: xA, yLi, (2) grinding the raw material, sintering it at 800-1200° C. for 2-8 h, cooling to the room temperature, and then obtaining the ZnO green luminescent material. The present ZnO green luminescent material doped with trivalent rare earth ion compound and Li compound has high stability and luminous intensity, and has higher low-voltage cathode ray luminescence efficiency. The method can easily be operated and can be used widely.

Abstract: Provided are thiophene-containing organic photoelectric materials represented by structural formula (1). The materials are thiophene compounds having multiple thiophene rings and cyano groups, useful in solar cell applications. One primary compound, for example, derivative of dicyanoethenyl quinquethiophene is well suited for application as electron donor material. Preparation methods of these thiophene-containing organic photoelectric materials and solar cell devices containing the above thiophene-containing organic photoelectric materials also are provided. Due to the fact that thiophene rings and cyano groups are included, the above thiophene-containing organic photoelectric materials have broader spectra respondence, better thermal stability and environmental stability.

Abstract: Bismuth ion sensitized rare earth germanate luminescence materials and preparation methods are disclosed. The luminescence materials are the compounds of the following general formula (Y1-x-y-zAxBiyLnz)2GeO5. The preparation methods comprise: using oxides, carbonates, oxalates, acetates, nitrates or halides of Y, A, Bi, Ln and Ge as raw materials, wherein A is one of Gd, Lu, Sc and La, and Ln is at least one of Tm, Ho, Sm, Tb, Eu and Dy, homogeneously grinding the raw materials, sintering at 1300-1500° C. for 6-24 h, and then cooling them to room temperature to obtain the bismuth ion sensitized rare earth germanate luminescence materials.

Abstract: The present invention relates to oxide luminescent materials activated by trivalent thulium and their preparations. The luminescent materials are the compounds with the following general formula: (RE1-xTmx)2O3, wherein a range of x is 0<x?0.05 and RE is one or two selected from Y, Gd, La, Lu and Sc. These materials are prepared by Sol-Gel method or high temperature solid phase method using metal oxide of Tm3+, chloride of Tm3+, nitrate of Tm3+, carbonate of Tm3+ or oxalate of Tm3+, and one or two of oxide Y3+, Gd3+, La3+, Lu3+ or Sc3+, chloride Y3+, Gd3+, La3+, Lu3+ or Sc3+, nitrate Y3+, Gd3+, La3+, Lu3+ or Sc3+, carbonate Y3+, Gd3+, La3+, Lu3+ or Sc3+ and oxalate of Y3+, Gd3+, La3+, Lu3+ or Sc3+ as raw material. The present oxide luminescent materials activated by trivalent thulium have high stability, color purity and luminous efficiency, and the methods can easily be operated.

Abstract: A light emitting device and a manufacturing method thereof are provided. The light emitting device (10) comprises a light emitting substrate (13) and a metal layer (14) having irregularly arranged nano-particles structure formed on a surface of the light emitting substrate (13), wherein the material of the light emitting substrate (13) is a transparent ceramic (13) comprised of Y2O3:Eu. By disposing the metal layer having the irregularly arranged nano-particles structure on the light emitting substrate, surface Plasmon is formed on the interface between the cathode ray and the light emitting substrate, to greatly increase the light efficiency.