Abstract: The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film.

Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.

Abstract: A thin-film tandem photovoltaic cell comprises on a glass substrate a front TCO (3), an amorphous silicon cell as top cell (5), a semi-transparent reflector layer (7), a microcrystalline silicon bottom cell (9). Thereby, the semi-transparent reflector layer (7) is of n-doped silicon oxide with an index of refraction below 1.7. The thickness of the amorphous silicon top cell (5) is below 200 nm.

Abstract: The present invention provides a hot-trap device (1) comprising an enclosure (2) with at least one inlet (3), at least one outlet (5) at least one heating means (7) and at least one collector means (10) for the conversion of reaction by-products into products, wherein the collector means is arranged within the enclosure between the inlet and the outlet has a diameter that substantially matches the diameter of the enclosure and has at least one opening (18).

Abstract: It is an object of the present invention to enlarge flexibility with, respect to material selection for transparent conductive oxide layers within a solar cell device especially in view of the respective, material-specific vacuum deposition processes. This object is resolved by a solar cell device which comprises at least one thin film solar cell and an electrically conductive, transparent oxide layer wherein the addressed electrically conductive, transparent oxide layer is of doped TiOx.

Abstract: Micromorph tandem cells with stabilized efficiencies of 11.0% have been achieved on as-grown LPCVD ZnO front TCO at bottom cell thickness of just 1.3 ?m in combination with an antireflection concept. Applying an advanced LPCVD ZnO front TCO stabilized tandem cells of 10.6% have been realized at a bottom cell thickness of only 0.8 ?m. Implementing intermediate reflectors in Micromorph tandem cell devices allow for, compared to commercial SnO2, reduced optical losses when LPCVD ZnO is used. At present highest stabilized cell efficiency reached 11.3% incorporating an in-situ intermediate reflector with a bottom cell thickness of 1.6 ?m.

Abstract: A method for cleaning a vacuum pump (10) having a pump chamber (12) with at least one pump rotor (14) includes performing the steps of: a) filling a cleaning liquid (28) into the pump chamber (12), b) distributing the cleaning liquid (28) in the pump chamber (12), c) dissolving impurities with the cleaning liquid (28), d) draining the cleaning liquid (28) from the pump chamber (12).

Abstract: The invention relates to a method of manufacturing a photovoltaic module comprising the following steps: a) assembling a front end part (10) comprising a front cover element and a photovoltaic cell, b) assembling a back end part (12) comprising a back reflector, a junction box and a back cover element, and c) connecting the assembled front end part (10) with the assembled back end part (12). Further, the invention relates to an assembled back end part (12) and to an interlayer foil (14).

Abstract: An electrode (3i) of a radiofrequency parallel plate plasma reactor comprises an electrode surface of a multitude of surfaces of metal members (28) which reside on dielectric spacing members (29), whereby the metal members (28) are mounted in an electrically floating manner. The dielectric members (29) are mounted, opposite to the metal members (28), upon a metal Rf supply body (14a).

Abstract: The present invention provides a method for manufacturing a vacuum processing chamber comprising a volume which is defined by a wall and which can be evacuated, said wall being made of aluminum by casting, said wall comprising an outer face and an inner face, said inner face faces the volume, and a method for improving the inner face of the wall of a vacuum processing chamber, wherein the inner face of said wall is smoothened by grinding and is subsequently pearl-blasted or shot-blasted. Vacuum processing chambers obtained by said methods are provided too.

Abstract: A vacuum processing system with a vacuum chamber has an inlet, at least first and second outlets, exhaust means at a first of said outlets and a remote plasma source RPS, wherein the RPS is attached to a connecting point to the second of said outlets. In a method for remote plasma cleaning of a vacuum processing system with such an arrangement a flow of radicals is generated by said remote plasma source and directed to the first of said outlets whilst operating exhaust means via the second of said outlets.

Abstract: A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Abstract: The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described.

Abstract: A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).

Abstract: The present application provides a method for the production of photovoltaic devices, preferably tandem solar cells. The method comprises the steps of: Providing at least one substrate comprising a front contact; and depositing at least a first semiconductor stack onto the substrate to produce a photo-voltaic device; and comprises at least two of the steps of: applying a back contact to the photovoltaic device; contacting of the photovoltaic device; removal of unnecessary material from the edge regions of the photovoltaic device; encapsulation; cross-contacting; and/or framing of the photovoltaic device, wherein the substrate is continuously or semi-continuously moved from one step of the method to the next step of the method. The present application furthermore provides a system to carry out the method of the invention.

Abstract: A method for accurately laser scribing lines on a panel utilising a laser beam scanner unit (13) including an optical system and a scanner lens. The unit (13) moves a laser beam (12) in a first direction (X), to scribe sections of lines (15) on the panel (11) that are a fraction of the total line length required and then moving the unit (13) continuously with respect to the panel (11) in a second direction (Y), perpendicular to the first direction (X), to form a band (16) of scribe lines. The scanner unit (13) is positioned so that the starting position of scribe lines in each band next to be processed overlap exactly the finishing position ends of scribe lines in the last band that has been processed so that all scribe lines interconnect. The method repeats the using and moving steps to form a plurality of parallel bands of scribe lines which cover the area of the panel.

Abstract: In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.

Abstract: The magnetron sputtering arrangement (2) comprises a target arrangement (3) comprising a target (3a1) having a sputtering surface (4) the shape of which defines a first (A1 and a second axis (A2) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the sputtering surface; a magnet arrangement (40) generating a magnetic field above said sputtering surface; and a drive (70) adapted to establishing a substantially transitional relative movement between said magnetron magnetic field and said sputtering surface. Said relative movement describes a path (80) defining a third (A3) and a fourth axis (A4) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the path (80). Said third axis is at least approximately parallel to said first axis (A3), and said path (80) has at least two pointed corners (81), each corner located on one of said third axis (A3) and said fourth axis (A4).

Abstract: The present invention provides a method for removing metal and/or metal oxide contamination from the interior of a vacuum coating reactor, the method comprising the steps of: a) performing an idle coating step by depositing a coating layer, wherein the coating layer comprises silicon; b) at least partly removing the deposited coating layer. The method according to the invention is particularly suitable for cleaning reactors in the context of solar cell manufacturing. The method is time saving and cost saving.

Abstract: The invention discloses a contacting device for a thin film solar cell, comprising a positioning plane for positioning the solar cell thereon, a contact element for electrically contacting the solar cell and a suction element, wherein the solar cell is arrangeable on the top side of the positioning plane, the contact element is arranged slideably in a direction orthogonal to the positioning plane and arranged slideably through an opening of the positioning plane, and the suction element is arranged on the bottom side of the positioning plane for sucking air through the opening. The contacting device allows for obtaining improved measurement accuracy.