Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering only top faces on the upper surface side of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A substrate for mounting a semiconductor element thereon has columnar terminal portions formed by concavities provided on an upper surface of a metal plate made of a copper-based material, and is provided with a roughened silver plating layer having acicular projections, applied, as the outermost plating layer, to top faces of the columnar terminal portions. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The substrate for mounting a semiconductor element thereon facilitates thin design of semiconductor packages produced by flip-chip mounting, can be manufactured with improved productivity owing to reduction in cost and operation time, achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering top faces and faces that form concavities or a through hole between the top faces and bottom faces of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame for use in an optical semiconductor device has a die pad portion on which an optical semiconductor element is mounted and a lead portion electrically connectable with the optical semiconductor element. A surface on a lead frame substrate forming a part of or an entirety of the die pad portion and the lead portion is laminated with a glossy Ni plating layer having a gloss of 2.0-3.5 and a noble metal plating layer including an Ag plating layer, as an uppermost layer, having a gloss of 1.6 or more.

Abstract: A device for mounting a semiconductor element includes a metal plate serving as a base, a roughened silver plating layer with acicular projections, formed on at least either of: (a) top faces; and (b) faces that form concavities or through holes between the top faces and bottom faces; of the metal plate, and a reinforcing plating layer covering, as an outermost plating layer, an outer surface of the acicular projections in the roughened silver plating layer. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. An outer surface of the reinforcing plating layer is shaped to have acicular projections with a surface area ratio of 1.30 or more and 6.00 or less to the corresponding smooth surface, as inheriting the shape of the acicular projections in the roughened silver plating layer.

Abstract: A lead frame includes a lead frame substrate made of a copper-based material, plating layers composed of nickel, palladium and gold layers laminated in this order on top faces and bottom faces of the lead frame substrate, and a roughened silver plating layer having acicular projections, provided as an outermost plating layer and covering faces of the lead frame substrate that form concavities or a through hole between the top faces and the bottom faces of the lead frame substrate. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A device for mounting a semiconductor element includes a metal plate serving as a base, a roughened silver plating layer with acicular projections, formed on at least either of: (a) top faces; and (b) faces that form concavities or through holes between the top faces and bottom faces; of the metal plate, and a reinforcing plating layer covering, as an outermost plating layer, an outer surface of the acicular projections in the roughened silver plating layer. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. An outer surface of the reinforcing plating layer is shaped to have acicular projections with a surface area ratio of 1.30 or more and 6.00 or less to the corresponding smooth surface, as inheriting the shape of the acicular projections in the roughened silver plating layer.

Abstract: A substrate for mounting a semiconductor element thereon includes a metal plate and columnar terminal portions composed only of plating layers and formed on one-side surface of the metal plate. The columnar terminal portions include, as an outermost plating layer, a roughened silver plating layer having acicular projections. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The substrate for mounting a semiconductor element thereon can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer, which are to serve as terminals and the like, to be thin.

Abstract: A substrate for mounting a semiconductor element thereon has columnar terminal portions formed by concavities provided on an upper surface of a metal plate made of a copper-based material, and is provided with a roughened silver plating layer having acicular projections, applied, as the outermost plating layer, to top faces of the columnar terminal portions. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The substrate for mounting a semiconductor element thereon facilitates thin design of semiconductor packages produced by flip-chip mounting, can be manufactured with improved productivity owing to reduction in cost and operation time, achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame includes a lead frame substrate made of a copper-based material, plating layers composed of nickel, palladium and gold layers laminated in this order on top faces and bottom faces of the lead frame substrate, and a roughened silver plating layer having acicular projections, provided as an outermost plating layer and covering faces of the lead frame substrate that form concavities or a through hole between the top faces and the bottom faces of the lead frame substrate. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering top faces and faces that form concavities or a through hole between the top faces and bottom faces of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering the entire surface of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering only top faces on the upper surface side of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A substrate for mounting a semiconductor element thereon includes a metal plate and columnar terminal portions composed only of plating layers and formed on one-side surface of the metal plate. The columnar terminal portions include, as an outermost plating layer, a roughened silver plating layer having acicular projections. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111> and <101>. The substrate for mounting a semiconductor element thereon can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer, which are to serve as terminals and the like, to be thin.

Abstract: A lead frame includes, as an outermost plating layer, a roughened silver plating layer having acicular projections and covering the entire surface of a lead frame substrate made of a copper-based material. The roughened silver plating layer has a crystal structure in which the crystal direction <101> occupies a largest proportion among the crystal directions <001>, <111>, and <101>. The lead frame can be manufactured with improved productivity owing to reduction in cost and operation time, and achieves remarkably high adhesion to sealing resin while keeping the total thickness of plating layers including the silver plating layer to be thin.

Abstract: A multi-row wiring member configured of a plurality of wiring members arrayed in a matrix includes a resin layer, a first plating layer forming internal terminals, a plating layer forming wiring portions and a second plating layer forming external terminals. The first plating layer is formed in the resin layer with lower faces thereof uncovered in a bottom surface of the resin layer. The plating layer forming wiring portions is formed on the first plating layer in the resin layer. The second plating layer is formed in the resin layer on partial areas within areas of the plating layer forming wiring portions, with upper faces thereof being uncovered on a top-surface side of the resin layer. On a bottom-surface side of the resin layer, a metal frame is formed at a margin around an aggregate of individual wiring members arrayed in the matrix.

Abstract: A lead frame includes a plurality of leads formed from a metal plate having a front side and a back side, a first resin member, and a second resin member. The leads have side faces thereof fixed with the first resin member. Faces serving as internal connectors of the leads are uncovered on the side of the front-side surface of the first resin member, and faces serving as external connectors of the leads are uncovered on the side of the back-side surface of the first resin member. The second resin member is formed on the front-side surface of the first resin member to be at a level higher than the faces serving as the internal connectors, and has openings for leaving the faces serving as the internal connectors uncovered.

Abstract: A lead frame has a concavity formed on the upper-surface side of a metal plate and columnar portions defined by the concavity. A horizontally deepest portion regarding a side face shape of the concavity is positioned lower than the vertical center position of the concavity. Thereby, overhangs projecting from the top faces of the columnar portions rarely cause shape defects or burr defects and thus the lead frame has an enhanced capability, by the columnar portions, of preventing a sealing resin from coming off without sacrificing the freedom of wiring design.

Abstract: A multi-row wiring member for semiconductor device configured of a plurality of wiring members arrayed in a matrix includes a permanent resist, a first plating layer forming internal terminals, a plating layer forming wiring portions and a second plating layer forming external terminals. The first plating layer is formed in the permanent resist with lower faces thereof uncovered in the bottom surface of the permanent resist. The plating layer forming wiring portions is formed on the first plating layer in the permanent resist. The second plating layer is formed in the permanent resist on partial areas within areas of the plating layer forming wiring portions, with upper faces thereof being uncovered on a top-surface side of the permanent resist. On a bottom-surface side of the permanent resist, a metal frame is formed at the margin around an aggregate of individual wiring members for semiconductor devices arrayed in a matrix.

Abstract: A multi-row wiring member for semiconductor device configured of a plurality of wiring members arrayed in a matrix includes a resin layer, a first plating layer forming internal terminals, a plating layer forming wiring portions and a second plating layer forming external terminals. The first plating layer is formed in the resin layer with lower faces thereof uncovered in the bottom surface of the resin layer. The plating layer forming wiring portions is formed on the first plating layer in the resin layer. The second plating layer is formed on partial areas within areas of the plating layer forming wiring portions, with upper faces thereof being uncovered on a top-surface side of the resin layer. On a bottom-surface side of the resin layer, a resin frame is integrally formed with the resin layer at the margin around an aggregate of individual wiring members for semiconductor devices arrayed in a matrix.