Abstract: A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion layers, a gate insulation layer at least formed on the channel region, and a gate electrode formed on the gate insulation layer. The gate electrode includes a tantalum nitride layer in a region in contact with at least the gate insulation layer. The semiconductor device exhibits high current drive capability and can be manufactured at high yield.

Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time &Dgr;t from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.

Abstract: First and second two spacing jigs 81 are used each having a rectangular parallelepipedal body 81a formed on the bottom surface thereof with projections 82 which are arranged side by side at a spacing equal to a predetermined interval between reference bores 106. First, the projections 82 of the first jig 81 are fitted in front reference bores 106 of respective lower members 31, 32, 33, and the projections 82 of the second jig 82 in rear reference bores 106 of the lower members. A right angle holding jig 84 in the form of a rectangular frame and having inner side faces positionable respectively in contact with the front side face of the first jig 81, the rear side face of the second jig 81 and the left and right side faces of the two jigs 81 is fitted around the bodies 81a of the two jigs 81 to adjust the arrangement of bores 106 to right angles. The lower members are fixed to a support member in this state by tightening up screw members 110.

Abstract: First and second two spacing jigs 81 are used each having a rectangular parallelepipedal body 81a formed on the bottom surface thereof with projections 82 which are arranged side by side at a spacing equal to a predetermined interval between reference bores 106. First, the projections 82 of the first jig 81 are fitted in front reference bores 106 of respective lower members 31, 32, 33, and the projections 82 of the second jig 82 in rear reference bores 106 of the lower members. A right angle holding jig 84 in the form of a rectangular frame and having inner side faces positionable respectively in contact with the front side face of the first jig 81, the rear side face of the second jig 81 and the left and right side faces of the two jigs 81 is fitted around the bodies 81a of the two jigs 81 to adjust the arrangement of bores 106 to right angles. The lower members are fixed to a support member in this state by tightening up screw members 110.

Abstract: Each of two coupling members is formed in an abutting end lace thereof with a recessed portion for accommodating a gasket and a retainer therein, and the recessed portion has a retainer holding hollow cylindrical portion formed centrally on a bottom surface thereof and provided on an end face thereof with an annular projection for clamping the gasket. The gasket comprises a small portion and a large portion having a greater outside diameter than the small portion. The retainer is attached to the cylindrical portion of the coupling member with which the gasket small portion is in contact.

Abstract: An apparatus for forming a high quality film at high speed includes a wafer susceptor provided wiht a vacuum exhaust system, a stock gas supply system, and a heating mechanism for directly heating the susceptor. A ceramic filter means is disposed in opposite juxtaposed face to face position relative to the wafer susceptor for blowing stock gas in a uniform manner against a wafer. Means for activating the stock gas is provided to thereby increase the probability of adsorption of the stock gas on the wafer surface.

Abstract: A draft chamber is located within a clean room for sequentially immersing and processing carriers such as silicone wafers in a plurality of solution vessels provided in the draft chamber. In the draft chamber, a first air flow moves in a substantially horizontal direction from the front portion of the draft chamber toward the rear portion above the surfaces of solutions contained in chemical solution vessels which generate toxic gasses and a second air flow moves downward from the ceiling of the draft chamber. Thus, the toxic gasses generated from the chemical solution vessels are prevented from leaking into the clean room.