Abstract: An interconnect structure for advanced packaging and method for the interconnect structure are disclosed. The method includes: providing a semiconductor substrate to be packaged having surface on which there is a first pad having conduction-promoting surface; depositing a first passivation layer on surface of the semiconductor substrate, the first pad is exposed from first passivation layer, forming a wiring layer on surface of the first passivation layer by screen printing, and forming a metal layer on surface of the wiring layer by electroless plating, wherein the wiring layer covers the first pad; forming a second passivation layer, which covers the first passivation layer and the interconnect, wherein there is a through hole in the second passivation layer, in which the metal layer is exposed; and forming a second pad by electroless plating, which fills the through hole and covers the second passivation layer around an opening of the through hole.

Abstract: An integrated photonics package and a method of forming it are disclosed. The integrated photonics package includes, encapsulated in a plastic encapsulation layer, an electrical signal module, a silicon photonics processing unit, a light-emitting unit, a heat sink structure and a micro-optical coupler. The electrical signal module is electrically connected and configured to both the silicon photonics processing unit and the light-emitting unit. The silicon photonics processing unit, the light-emitting unit and the micro-optical coupler are spaced apart, and the silicon photonics processing unit is located between the light-emitting unit and the micro-optical coupler. The light-emitting unit is configured to provide horizontal light, which is then processed by the silicon photonics processing unit and guided by the micro-optical coupler to vertically exit the integrated photonics package, thereby achieving in-package optical interconnection.

Abstract: An optical sensor device and a packaging method thereof are disclosed. The optical filter structure includes a light-emitting module, a first structure, a second structure and a mask layer. The first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module. The light-emitting module includes a light exit region, a photosensitive member and an optical filter layer. The light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member. The optical filter layer wraps exposed portion of photosensitive member. The mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer.

Abstract: A silicon photonic package and a method of fabricating the package are disclosed. The silicon photonic package includes an optical waveguide structure, a heat dissipation structure, a plastic encapsulation layer, first and second structures. The optical waveguide structure is a right trapezoidal structure, and a surface where a non-right angle leg thereof is a totally reflecting surface capable of totally reflecting an optical signal that enters the optical waveguide structure from a surface where a right angle leg is disposed in a direction parallel to bases to a plane where a front face of the plastic encapsulation layer is disposed. The heat dissipation structure and the optical waveguide structure are spaced apart from each other and both embedded in the plastic encapsulation layer. The optical waveguide structure of the present invention allows a great reduction in loss of an optical signal incurred by its propagation in the optical waveguide structure.