Abstract: A grinding apparatus and a grinding method of a composite substrate including resin, by which loading of a grinding wheel can be suppressed in grinding of a large-sized composite substrate including resin, and with which grinding can be effectively performed with high precision. This method for grinding a front surface of a composite substrate formed with a resin substrate embedded with at least one of a semiconductor device chip and an electrode, includes: bringing at least a part of a grinding member for grinding the front surface of the composite substrate into contact with the front surface; supplying water to at least one of a contacting part or a non-contacting part between the front surface of the composite substrate and the grinding member; and grinding the front surface of the composite substrate simultaneously with the supplying water.

Abstract: A method for manufacturing a semiconductor device includes chucking in which a semiconductor device wafer is attached to an upper surface of a chuck mechanism with its device surface down; and edge trimming performed after the chucking, wherein the edge trimming comprises: rotating the semiconductor device water horizontally by the chuck mechanism; rotating a rotating blade horizontally by a vertical spindle to which an ultrasonic wave is applied and trimming a circumferential side surface of the semiconductor device wafer by the rotating blade.

Abstract: Provided is an automatic grinding apparatus, comprising a grinding wheel, a support, a feeding device, a control device, a first detector, a second detector, a third detector, and a fourth detector, wherein the control device is further configured to, before processing using the grinding wheel is started, calculate a range in which the grinding wheel and the support are relatively moved on the basis of information on positions of a surface of a workpiece and an outer peripheral end portion and an end surface of the grinding wheel detected by the first detector, the second detector, the third detector, and the fourth detector, to move the grinding wheel or the support by controlling the feeding device, and to automatically start the processing using the grinding wheel.

Abstract: An electrostatic attachment chuck includes: a substrate; a synthetic resin sheet joined to one main surface of the substrate; and at least a pair of electrodes disposed in the synthetic resin sheet. The synthetic resin sheet includes a planarized and ground surface serving as a surface on which a semiconductor wafer is abutted.

Abstract: An embodiment of the present disclosure provides a method of manufacturing a semiconductor apparatus, including the following steps.

Abstract: An automatic grinding apparatus includes: a grinding wheel configured to grind a workpiece; a support configured to support the workpiece; a feeding device configured to change a relative position between the grinding wheel and the workpiece; and a control device configured to, before processing using the grinding wheel is started, calculate a range in which the grinding wheel and the support are relatively moved on the basis of information on positions of the workpiece and the grinding wheel detected by a first detector, a second detector, and a third detector, move the grinding wheel or the support by performing numerical control with respect to the feeding device, and automatically start the processing using the grinding wheel.

Abstract: A compound chamfering device that manufactures prism-shaped ingot blocks of excellent surface smoothness is disclosed. The four-corner round surfaces and the four sides of a prism-shaped ingot obtained by using a pair of rotary blades of a slicer to perform four-side peeloff of a cylindrical ingot block are chamfered by rough grinding with a pair of cup wheel type rough grinding grindstones. A pair of cup wheel type finishing grinding grindstones are used to chamfering by finishing grinding the four-corner round surfaces and the four sides of the block.

Abstract: A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

Abstract: A compound chamfering device that manufactures prism-shaped ingot blocks of excellent surface smoothness is disclosed. The four-corner round surfaces and the four sides of a prism-shaped ingot obtained by using a pair of rotary blades of a slicer to perform four-side peeloff of a cylindrical ingot block are chamfered by rough grinding with a pair of cup wheel type rough grinding grindstones. A pair of cup wheel type finishing grinding grindstones are used to chamfering by finishing grinding the four-corner round surfaces and the four sides of the block.

Abstract: To provide a high-rigidity flat grinding device, a substrate flat grinding device has three fastening plate lifting-and-lowering mechanisms that have kinematic couplings and a cylinder rod that move the fastening plate upward or downward. Being a high-rigidity grinding device in which the load of the fastening plate 6 also is a load on the grindstone 14 that does the grinding, there is little deflection in the thickness distribution of the substrates that are obtained, even if they are semiconductor substrates having a large substrate diameter of 450 mm.

Abstract: A planarization apparatus and method that thins and planarizes a substrate by grinding and polishing the rear surface of the substrate with high throughput, and that fabricates a semiconductor substrate with reduced adhered contaminants. A planarization apparatus that houses various mechanism elements in semiconductor substrate loading/unloading stage chamber, a rear-surface polishing stage chamber, and a rear-surface grinding stage chamber. The throughput time of the rear-surface polishing stage that simultaneously polishes two substrates is typically about double the throughput time of the rear-surface grinding stage that grinds one substrate.

Abstract: To provide a high-rigidity flat grinding device, a substrate flat grinding device has three fastening plate lifting-and-lowering mechanisms that have kinematic couplings and a cylinder rod that move the fastening plate upward or downward. Being a high-rigidity grinding device in which the load of the fastening plate 6 also is a load on the grindstone 14 that does the grinding, there is little deflection in the thickness distribution of the substrates that are obtained, even if they are semiconductor substrates having a large substrate diameter of 450 mm.

Abstract: A substrate-planarizing device and method of using the device comprising a substrate storage stage outside a room, and on a base inside the room, a multi-joint transfer robot, a temporary alignment platform, a movable transfer pad, a grinding process stage in which substrate holders that compose three stages of a substrate loading/unloading stage, a rough grinding stage, a finish grinding stage are arranged in a concentric pattern on the first index rotary table, and a polishing process stage that has a substrate holder table composing a substrate loading/unloading/finish polishing stage as well as a substrate holder table composing a rough polishing stage arranged in a concentric pattern on the second index rotary table.

Abstract: Double-sided polishing equipment configured to polish a rectangular substrate, comprising a carrier having a pocket configured to accommodate a rectangular substrate, a lateral linear moving mechanism configured to move the carrier, first and second polishing pads with first and second rotational axes, respectively, offset from centers of the pads, the polishing surfaces of the first and second polishing pads being parallel. The equipment further includes at least one elevating mechanism coupled to at least one of the polishing pads, first and second rotary drive mechanisms coupled to each of the first and second polishing pads, respectively; and configured to rotate the first and second pads about the first and second rotational axes. A polishing-agent supplying device is present and configured to supply polishing agent to a plane where a substrate that is accommodated in the pocket to accommodate the substrate comes into contact with the polishing pads.

Abstract: Double-sided polishing equipment configured to polish a rectangular substrate, comprising a carrier having a pocket configured to accommodate a rectangular substrate, a lateral linear moving mechanism configured to move the carrier, first and second polishing pads with first and second rotational axes, respectively, offset from centers of the pads, the polishing surfaces of the first and second polishing pads being parallel. The equipment further includes at least one elevating mechanism coupled to at least one of the polishing pads, first and second rotary drive mechanisms coupled to each of the first and second polishing pads, respectively; and configured to rotate the first and second pads about the first and second rotational axes. A polishing-agent supplying device is present and configured to supply polishing agent to a plane where a substrate that is accommodated in the pocket to accommodate the substrate comes into contact with the polishing pads.

Abstract: A non-contact type hydrostatic linear guide device includes a guide unit having a pair of rail parts on the top surface thereof, and a slide unit having oil pockets in a running surface thereof. A load of the slide unit concentrates on the frame of the guide unit. The slide unit has a stepped leg structure in which projections are disposed in the under surface of a table thereof in bilateral symmetry. The projections contact the top surface of inner projections disposed on the guide unit and the outer side surfaces thereof face the inner surfaces of the wear plates disposed on the guide unit, and wear plates are placed outward in the midway of the under surfaces of the projections as the side surfaces thereof face the both side surfaces of the first recessed part and the third recessed part of the guide unit.

Abstract: An adaptive work table-reciprocation control system and method that can reduce a grinding time. The system uses a vibration sensor head installed on a chuck surface in the vicinity of the workpiece to detect a vibration signal emitted from the contact zone between the grinding wheel and the workpiece. When the value of the vibration signals falls below a trigger level, a work table direction of motion is reversed.

Abstract: An adaptive work table-reciprocation control system and method that can reduce a grinding time. The system uses a vibration sensor head installed on a chuck surface in the vicinity of the workpiece to detect a vibration signal emitted from the contact zone between the grinding wheel and the workpiece. When the value of the vibration signals falls below a trigger level, a work table direction of motion is reversed.

Abstract: A non-contact type hydrostatic linear guide device includes a guide unit having a pair of rail parts on the top surface thereof, and a slide unit having oil pockets in a running surface thereof. A load of the slide unit concentrates on the frame of the guide unit. The slide unit has a stepped leg structure in which projections are disposed in the under surface of a table thereof in bilateral symmetry. The projections contact the top surface of inner projections disposed on the guide unit and the outer side surfaces thereof face the inner surfaces of the wear plates disposed on the guide unit, and wear plates are placed outward in the midway of the under surfaces of the projections as the side surfaces thereof face the both side surfaces of the first recessed part and the third recessed part of the guide unit.

Abstract: A method of detecting an end point of polishing arranged to perform CMP polishing with which an insulating layer of a wafer incorporating a substrate having a metal-containing permalloy layer formed thereon and the insulating layer formed on the metal-containing permalloy layer is chemimechanically polished to expose the flat permalloy layer, the method of detecting an end point of polishing, having the steps of: collecting abrasive material slurry on a surface plate for polishing as a continuous flow from the start or during CMP polishing; continuously mixing a color developing reagent with the collected continuous flow to prepare a specimen for the continuos flow; reading the color of the specimen as a digital value (Ii) by a color identifying sensor; and determining a moment of time at which the digital value (Ii) reaches a digital value (Io) of a specimen of a waste flow of the abrasive material slurry at the end of polishing to be the end of CMP polishing.