Abstract: In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapor state in a container comprising said susceptor by said heating and carried in a vapor state to said substrate for said growth.

Abstract: A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.

Abstract: A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led to the substrate for the growth, above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding the gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.

Abstract: The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.

Abstract: A device for epitaxially growing objects of SiC by Chemical Vapor Deposition on a substrate comprises a substantially cylindrical susceptor having continuous circumferential walls with a substantially uniform thickness surrounding a chamber receiving the substrate, the walls being surrounded by thermal insulation. The circumferential susceptor walls and thereby the substrate and a gas mixture fed to the substrate for the growth are heated to a temperature level in the range of 2000.degree.-2500.degree. C. at which sublimation of the grown material starts to considerably increase. The gas mixture is fed into the susceptor with a composition and at a rate that ensures a positive growth.