Patents Assigned to Okmetic Oyj
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Patent number: 9728452Abstract: A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapor deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.Type: GrantFiled: March 30, 2012Date of Patent: August 8, 2017Assignee: OKMETIC OYJInventors: Veli Matti Airaksinen, Jari Makinen
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Patent number: 9312345Abstract: The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice damage zone is processed into the substrate and the preserved lattice damage zone is configured to achieve the RF loss reduction of the substrate by suppressing a parasitic surface conduction.Type: GrantFiled: November 26, 2014Date of Patent: April 12, 2016Assignee: OKMETIC OYJInventor: Atte Haapalinna
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Publication number: 20140061867Abstract: A method for depositing one or more polycrystalline silicon layers (230c) on a substrate (210) by a chemical vapour deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.Type: ApplicationFiled: March 30, 2012Publication date: March 6, 2014Applicant: Okmetic OYJInventors: Veli Matti Airaksinen, Jari Makinen
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Patent number: 8641820Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.Type: GrantFiled: March 9, 2012Date of Patent: February 4, 2014Assignee: Okmetic OyjInventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo
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Patent number: 8152921Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.Type: GrantFiled: September 1, 2006Date of Patent: April 10, 2012Assignee: Okmetic OyjInventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo
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Patent number: 7923353Abstract: It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of preparation for said first layer for next phase, growing thermal oxide layer on a second wafer, bonding said first and second wafers into a stack, annealing the stack for a crystalline formation in said thermal oxide layer as a second layer, and thinning said first wafer to a pre-determined thickness. The invention concerns also a wafer manufactured according to the method, chip that utilizes such a wafer structure and an electronic device utilizing such a chip.Type: GrantFiled: March 27, 2006Date of Patent: April 12, 2011Assignee: Okmetic OyjInventor: Jari Mäkinen
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Patent number: 7435665Abstract: A new clean CVD growing process of dopant doped silicon layers comprising epitaxial silicon or polycrystalline silicon, has been developed. The process is occurring advantageously at a high growing temperature of 600-1250° C., having a phase in which silicon comprised halide is used as a silicon source gas with a dopant.Type: GrantFiled: October 6, 2004Date of Patent: October 14, 2008Assignee: Okmetic OyjInventors: Veli Matti Airaksinen, Maria Elina Hokkanen
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Publication number: 20080053372Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.Type: ApplicationFiled: September 1, 2006Publication date: March 6, 2008Applicant: OKMETIC OYJInventors: Olli Anttila, Ari Saarnikko, Jari Paloheimo
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Publication number: 20070224782Abstract: It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of preparation for said first layer for next phase, growing thermal oxide layer on a second wafer, bonding said first and second wafers into a stack, annealing the stack for a crystalline formation in said thermal oxide layer as a second layer, and thinning said first wafer to a pre-determined thickness. The invention concerns also a wafer manufactured according to the method, chip that utilizes such a wafer structure and an electronic device utilizing such a chip.Type: ApplicationFiled: March 27, 2006Publication date: September 27, 2007Applicant: OKMETIC OYJInventor: Jari Makinen
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Publication number: 20050000406Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.Type: ApplicationFiled: April 23, 2004Publication date: January 6, 2005Applicant: OKMETIC OYJInventors: Erik Janzen, Peter Raback, Alexandre Ellison