Abstract: A method of fabricating integrated circuits is described. A multi-material hard mask is formed on an underlying layer to be patterned. In a first patterning process, portions of the first material of the hard mask are etched, the first patterning process being selective to etch the first material over the second material. In a second patterning process, portions of the second material of the hard mask are etched, the second patterning process being selective to etch the second material over the first material. The first and second patterning processes forming a desired pattern in the hard mask which is then transferred to the underlying layer.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.

Abstract: Methods, systems, and related computer program products for photolithographic process simulation are disclosed. In one preferred embodiment, a resist processing system is simulated according to a Wiener nonlinear model thereof in which a plurality of precomputed optical intensity distributions corresponding to a respective plurality of distinct elevations in an optically exposed resist film are received, each optical intensity distribution is convolved with each of a plurality of predetermined Wiener kernels to generate a plurality of convolution results, and at least two of the convolution results are multiplied to produce at least one cross-product. A weighted summation of the plurality of convolution results and the at least one cross-product is computed using a respective plurality of predetermined Wiener coefficients to generate a Wiener output, and a resist processing system simulation result is generated based at least in part on the Wiener output.

Abstract: An optical communications link is described, comprising first and second fiber lines in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile (oppositely signed) and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line. For other described embodiments, the first and second fiber lines are in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line.

Abstract: An optical communications link is described, comprising first and second fiber lines in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile (oppositely signed) and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: An optical communications link is described, comprising first and second fiber lines in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile (oppositely signed) and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line.

Abstract: A method, system, and related computer program products for computer simulation of a photolithographic process is described. In one embodiment, a method for designing an integrated circuit is provided. The geometrical design intent and process condition values are received for at least one process variation associated with a photolithographic process to be used in fabricating the integrated circuit. The photolithographic process is simulated at the process condition values using one or more models characterizing the photolithographic process and the geometrical design intent to generate simulation results.

Abstract: A method, system, and related computer program products and computer-readable numerical arrays for computer simulation of a photolithographic process is described. In one preferred embodiment, simulation of a photolithographic process is provided in which a computation time for computing each subsequent result for each subsequent combination of process variation values and/or target depths is significantly less than a computation time for computing an initial result for an initial combination of the process variation values and/or target depths. Accordingly, where computation for the initial combination requires a first time interval T, results for (N?1) subsequent combinations can be achieved such that a total time interval for the N results is substantially less than NT. Computation of a process model used for the computer simulation is also described, as well as calibration of the process model to a physical photolithographic processing system.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: An optical communications link is described, comprising first and second fiber lines in substantial scaled translational symmetry by a common scaling factor with respect to a second-order dispersion coefficient profile (oppositely signed) and with respect to at least one of a loss/gain coefficient profile and a nonlinear coefficient-power product profile for facilitating progressive compensation along the second fiber line of at least one nonlinearity introduced along the first fiber line.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var, zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.

Abstract: Photolithographic process simulation is described in which fast computation of resultant intensity for a large number of process variations and/or target depths (var,zt) is achieved by computation of a set of partial intensity functions independent of (var,zt) using a mask transmittance function, a plurality of illumination system modes, and a plurality of preselected basis spatial functions independent of (var,zt). Subsequently, for each of many different (var,zt) combinations, expansion coefficients are computed for which the preselected basis spatial functions, when weighted by those expansion coefficients, characterize a point response of a projection-processing system determined for that (var,zt) combination. The resultant intensity for that (var,zt) combination is then computed as a sum of the partial intensity functions weighted according to corresponding products of those expansion coefficients.