Abstract: Provided is a transparent conductive film formed of an indium tin oxide film, which has a value of (carrier mobility)/(carrier concentration) of 2×10?20 cm5/V/S or more and a value of (carrier mobility)×(carrier concentration) of 200×1020 cm?1/V/S or more.

Abstract: A mother substrate for substrate for electronic device including comprises a transparent substrate having a first surface and a second surface opposite to each other, a concavo-convex structure formed on the first surface of the transparent substrate, and a transparent covering layer having a higher refractive index than the transparent substrate, and being configured to cover the first surface and the concavo-convex structure. An outer peripheral end of the transparent covering layer is located at the same position as an outer peripheral end of the transparent substrate or located at a position on an inner side with respect to the outer peripheral end of the transparent substrate, and an outer peripheral end of the concavo-convex structure is located at a position on an inner side with respect to the outer peripheral end of the transparent covering layer.