Abstract: Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound;(ii) at least one fluorine-containing compound; and (iii) water. Another cleaning composition comprises: (i) a compound selected from the group consisting of: an amine, a quatenary ammonium hydroxide, and ammonium hydroxide; (ii) at least one fluorine-containing compound; and (iii) water.
Type:
Grant
Filed:
May 19, 1998
Date of Patent:
February 29, 2000
Assignee:
Olin Microelectronic Chemicals
Inventors:
Vincent G. Leon, Kenji Honda, Eugene F. Rothgery
Abstract: The present invention is directed to an aqueous post-strip rinsing composition, comprising (1) water; (2) at least one water-soluble organic acid; and (3) at least one water-soluble surface-active agent, the rinse solution having a pH in the range from about 2.0 to about 5.0. The present invention is also directed to a method of using the above composition to remove residues from a semiconductor substrate.