Abstract: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a raised ridge structure surrounds each of the micro-lenses.

Abstract: A mixed-signal chip is described. The mixed-signal chip comprises a first portion of analog circuit and second portion of digital circuit, an on-chip precision oscillator residing on the first analog portion, the precision oscillator has a precision frequency; a first on-chip non-precision tunable oscillator from a first clock domain residing on the first analog portion, the first non-precision tunable oscillator has a first adjustable frequency; a noise detector for detecting a first noise in the first clock domain; a frequency adjusting register for storing a first desired frequency value of the first on-chip non-precision tunable oscillator, wherein the first desired frequency value is determined based on the first detected noise; a control circuit for adjusting the adjustable frequency of the first non-precision tunable oscillator to the first desired frequency value by using the precision frequency of the on-chip precision oscillator as a reference.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a multilayer stack is formed over the pixels, the multilayer stack adapted to filter incident light in the infrared region. Finally, micro-lenses are formed over the multilayer stack and over the light sensitive element.

Abstract: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a trench structure surrounds each of the micro-lenses.

Abstract: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a trench structure surrounds each of the micro-lenses.

Abstract: An image sensor comprising a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element, and a color filter material formed over the light sensitive element, the color filter material formed in a micro-lens shape.

Abstract: An image sensor comprising a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element, and a color filter material formed over the light sensitive element, the color filter material formed in a micro-lens shape.

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a multilayer stack is formed over the pixels, the multilayer stack adapted to filter incident light in the infrared region. Finally, micro-lenses are formed over the multilayer stack and over the light sensitive element.

Abstract: An image sensor having micro-lenses is disclosed. The image sensor comprises a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. A micro-lens is formed over each of the light sensitive elements. Finally, a trench structure surrounds each of the micro-lenses.

Abstract: A method of forming a base for a color filter layer of an image sensor is disclosed. The image sensor includes an array of pixels formed in a substrate. The method comprises depositing a polymer layer over the substrate. The polymer layer is patterned to form gaps in the polymer layer, the gaps located between the pixels. Finally, a second polymer layer is deposited into the gaps.

Abstract: An image sensor is disclosed that has a concave micro-lens structure. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a base material having a first index of refraction is formed over the pixels. Micro-lens cavities are formed in the base material over the light sensitive elements, the micro-lens cavity having a concave shape. Finally, color filters are formed into the micro-lens cavities, the color filters having a second index of refraction that is higher than the first index of refraction.

Abstract: A method of planarizing an image sensor substrate is disclosed. The method comprises depositing a first polymer layer over the image sensor substrate. The first polymer layer is patterned to form pillars. Then, a second polymer layer is deposited over the pillars. Optionally, the second polymer layer is etched back.