Patents Assigned to OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD.
  • Patent number: 11579501
    Abstract: The present invention provides a LCOS structure and a method for fabricating same. The LCOS structure includes: a silicon substrate; a liquid crystal layer and a transparent conductive layer both disposed above the silicon substrate. In the silicon substrate, there are formed a conductive pad, an opening where the conductive pad is exposed, and at least one metal layer. The opening is located peripherally around the liquid crystal layer, there is no portion of the metal layer located under the conductive pad. The conductive backing is located at the same vertical level as one metal layer in the at least one metal layer and electrically connected thereto, a conductive adhesive fills in the opening and a gap between the silicon substrate and the transparent conductive layer. The transparent conductive layer is electrically connected to the conductive pad by conductive metal particles in the conductive adhesive.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: February 14, 2023
    Assignee: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD.
    Inventors: Pei-Wen Ko, Chun-Sheng Fan
  • Patent number: 11435627
    Abstract: A liquid crystal on silicon (LCOS) display device and an electronic device are disclosed. The LCOS display device includes a wafer substrate and a pixel electrode layer over the wafer substrate. The pixel electrode layer comprises a plurality of pixel electrodes, and a reflector stack or at least a stack comprised of, stacked vertically downward, a first high refractive index insulating layer and a first low refractive index insulating layer is arranged between every adjacent two pixel electrodes. By arranging the reflector stacks or stacked layers (in the gaps) between adjacent pixel electrodes, the gaps exhibit higher reflectivity and produce less diffraction noise.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: September 6, 2022
    Assignee: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD.
    Inventors: Takashi Kozakai, Regis Fan, Ming Zhang, Libo Weng
  • Patent number: 10848648
    Abstract: An image sensor is disclosed which includes a substrate, a pixel array, a peripheral circuit, an SPAD detector and a VCSEL integrated in the substrate. The peripheral circuit is configured to process an electrical signal obtained from photoelectric conversion in the pixel array, the SPAD detector is configured to convert a first external optical pulse into an electrical pulse to provide a clock signal to the peripheral circuit. The VCSEL is driven by the peripheral circuit and configured to output a second optical pulse. The number of electrical connection terminals in the image sensor is reduced to only two, which is favorable to the miniaturization of the image sensor and simplifies the design of the mating device while allowing the inputting of a first optical pulse and outputting of a second optical pulse. By using these optical signals, extremely high speed and high bandwidth data transmission can be achieved.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: November 24, 2020
    Assignee: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD.
    Inventor: Chun-Sheng Fan
  • Patent number: 10607974
    Abstract: A micro LED display and a manufacturing method thereof are disclosed. A plurality of electrode structures is formed on a first surface of a substrate, and a plurality of circuit structure are formed in the substrate, where the circuit structures are electrically connected to the electrode structures. An LED functional layer is formed on the substrate, and includes a plurality of mutually isolated LED functional structures, where the LED functional structures are corresponding and electrically connected to the electrode structures. An electrode layer covers the LED functional layer and is electrically connected to the LED functional structures. Micro lenses are formed on the electrode layer and corresponding to the LED functional structures. Therefore, all the LED functional structures can be wholly used as a light-emitting region of a pixel, improving light emission efficiency of the micro LED display.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: March 31, 2020
    Assignee: OMNIVISION SEMICONDUCTOR (SHANGHAI) CO., LTD.
    Inventors: Regis Fan, Pei-Wen Ko, Chun-Sheng Fan