Abstract: A high-voltage gate driver circuit configured to drive a high-side power switch and a low-side power switch includes an active dv/dt triggered ESD protection circuit coupled between a protected node and a power rail node. The active dv/dt triggered ESD protection circuit includes a dv/dt circuit controlling an ESD protection transistor connected between the protected node and the power rail node. The ESD protection transistor is turned on when an ESD event occurs at the protected node to conduct ESD current from the protected node to the power rail node. The dv/dt circuit is charged up after a time constant to disable the ESD protection transistor.

Abstract: The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.

Abstract: An output circuit adapted for an integrated circuit is provided. The output circuit includes a driver, a pre-driver and a buffer circuit. The driver is electrically connected to two output nodes outside the integrated circuit to output signals. The pre-driver controls the driver, and includes a load and an input transistor connected in series. Between the load and the input transistor is a connection node for controlling the driver. The buffer circuit controls the load and the input transistor according to an internal signal. Before turning off the input transistor, the buffer circuit pre charges the connection node through the load.

Abstract: The present disclosure relates to a method of forming a transistor device having a channel region comprising a sandwich film stack with a plurality of different layers that improve device performance, and an associated apparatus. In some embodiments, the method is performed by selectively etching a semiconductor substrate to form a recess along a top surface of the semiconductor substrate. A sandwich film stack having a plurality of nested layers is formed within the recess. At least two of the nested layers include different materials that improve different aspects of the performance of the transistor device. A gate structure is formed over the sandwich film stack. The gate structure controls the flow of charge carriers in a channel region having the sandwich film stack, which is laterally positioned between a source region and a drain region disposed within the semiconductor substrate.

Abstract: In a picture display device, a picture having high gradation is obtained by using an alternating method which can deal with a video signal having a high frequency band region. On the basis of an input signal, a signal processing circuit outputs a pair of analog video signals (a signal reversal frequency is one frame), which have inversion relationships with each other, to a signal line drive circuit, and the signal line drive circuit applies one of the inputted pair of video signals to an odd signal line, and applies the other of the video signals to an even signal line, so that source line reversal drive is carried out.

Abstract: Provided is an integrated circuit (IC) manufacturing method. The method includes receiving a design layout of an IC, the design layout having a main feature; performing a process correction to the main feature thereby generating a modified main feature; using a computer, generating a simulated contour of the modified main feature, the simulated contour having a plurality of points; generating a plurality of assistant data in computer readable format, wherein each assistant data includes at least one process performance factor associated with one of the points; and keeping the simulated contour and the assistant data for use by a further process stage, such as mask making, mask inspection, mask repairing, wafer direct writing, wafer inspection, and wafer repairing.

Abstract: A circuit, a multiple power domain circuit, and a method are disclosed. An embodiment is a circuit including an input circuit having a first output and a second output, the input circuit being coupled to a first power supply voltage, and a level-shifting circuit having a first input coupled to the first output of the input circuit and a second input coupled to the second output of the input circuit, the level-shifting circuit being coupled to a second power supply voltage. The circuit further includes a first transistor coupled between a first node of the level-shifting circuit and the second power supply voltage, and a control circuit having an output coupled to a gate of the first transistor, the control circuit being coupled to the second power supply voltage.

Abstract: A transmission node includes a digital front-end device that provides functional clocks for JESD204B based data transmission. The front-end device includes a PLL for generating a phase locked clock based on a device clock of the front-end device, a clock dividing unit for generating the functional clocks by dividing the phase locked clock, a clock gating unit connected between the PLL and the clock dividing unit, and a system reference signal sampling unit for timing radio frame boundaries. The clock gating unit gates the phase locked clock to align the functional clocks with the device clock within a predetermined number of cycles of the phase locked clock, upon locking of the PLL or receipt of a system resynchronization request. The system reference signal sampling unit samples the system reference signal with zero-cycle latency between device clock and phase locked clock.

Abstract: Disclosed herein is a method of forming a metal-to-semiconductor contact with a doped metal oxide interlayer. An insulating layer is formed on a top surface of a semiconductor substrate with target region at the top surface of the semiconductor substrate. An opening is etched through the insulating layer with the opening exposing a top surface of a portion of the target region. A doped metal oxide interlayer is formed in the opening and contacts the top surface of the target region. The remainder of the opening is filled with a metal plug, the doped metal oxide interlayer disposed between the metal plug and the substrate. The doped metal oxide interlayer is formed from one of tin oxide, titanium oxide or zinc oxide and is doped with fluorine.

Abstract: A method for making a semiconductor structure includes forming an oxide layer onto non-volatile memory, high, and low voltage device regions of a substrate and forming a first gate material layer over the oxide layer. The first gate material layer is patterned to form a set of memory device select gates in the non-volatile memory device region and a set of gates in the high voltage device region. The patterning is performed while maintaining the oxide and first gate material layers over the low voltage device region. The method also includes forming a second gate material layer over the structure and forming a non-volatile storage layer between the set of select gates and the second gate material layer, from which a set of memory device control gates is patterned. Thereafter, the first gate material layer is patterned to form a set of gates in the low voltage device region.

Abstract: A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a non-uniform cathode region (104) and peripheral anode regions (106, 107) which define vertical and horizontal p-n junctions under the anode contact regions (130, 132), including a horizontal cathode/anode junction that is shielded by the heavily doped anode contact region (132).

Abstract: A metal trench de-coupling capacitor structure includes a vertical trench disposed in a substrate, an insulating layer deposited on the sidewall of the vertical trench, an inter-layer dielectric layer covering the substrate and the insulating layer, and a metal layer penetrating the interlayer dielectric layer to fill up the vertical trench. The metal layer is electrically connected to a power source.

Abstract: A method for controlling haptic feedback in an electronic device, in some embodiments, comprises: generating a series of braking pulses to stop vibrations generated by a vibration motor in the electronic device; during a high impedance period between at least one pair of pulses in said series of braking pulses, determining a rate of change of an induced voltage associated with the vibration motor; and if said rate of change meets a requirement, ceasing said generation of the series of braking pulses.

Abstract: A DC-DC converter includes a control circuit, a switching element, and a constant-voltage generation portion which generates an output voltage on the basis of an input voltage supplied through the switching element. The control circuit includes AD converters which convert the input voltage and the output voltage, a signal processing circuit, a pulse modulation circuit, and a power supply control circuit which controls supply of a power supply voltage to the signal processing circuit in accordance with digital values of the input voltage and the output voltage. The signal processing circuit determines the duty ratio in accordance with the digital value of the output voltage, and the pulse modulation circuit controls the switching element. The signal processing circuit includes a memory device including a memory element, a capacitor for storing data of the memory element, and a transistor for controlling charge in the capacitor. The transistor includes an oxide semiconductor.

Abstract: A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Abstract: A method of making a structure includes forming a first supporting member over a substrate, the first supporting member comprising a first material and having a first width defined along a reference plane. The method further includes forming a second supporting member over the substrate, the second supporting member having a second width defined along the reference plane, and the first supporting member and the second supporting member being separated by a gap region. The first width is at least 10 times the second width, and a gap width of the gap region being from 5 to 30 times the second width.

Abstract: A device includes a semiconductor fin, a gate dielectric on sidewalls of the semiconductor fin, a gate electrode over the gate dielectric, and isolation regions. The isolation regions include a first portion on a side of the semiconductor fin, wherein the first portion is underlying and aligned to a portion of the gate electrode. The semiconductor fin is over a first top surface of the first portion of the isolation regions. The isolation regions further include second portions on opposite sides of the portion of the gate electrode. The second top surfaces of the second portions of the isolation regions are higher than the first top surface of the isolation regions.

Abstract: A circuit includes a first transistor having a first current electrode coupled to a first power supply node, a second current electrode coupled to a switching node; a second transistor having a first current electrode coupled to the switching node, a second current electrode coupled to a second power supply node; an inductor having a first terminal coupled to the switching node, a second terminal coupled to an output node; a third transistor having a first current electrode coupled to the output node, a second current electrode coupled to the switching node; a driver circuit configured to transition the switching node from a first voltage to a second voltage by turning on the third transistor to couple the output node to the switching node during a first time period, turning on the first transistor to couple the first power supply node to the switching node during a second time period.

Abstract: A semiconductor device includes a die, a pad disposed on the die and configured to be electrically coupled with a bump through a conductive trace attached on the pad, a polymer disposed over the die and patterned to provide a path for the conductive trace passing through, and a molding surrounding the die and the polymer. A top surface of the molding is substantially in a same level as a top surface of the polymer.

Abstract: Disclosure is an image synchronization method and system thereof being applied to a first image detection unit and a second image detection unit. The system comprises a monitoring unit, an extension interval generation unit and a control unit. The monitoring unit monitors the first image detection unit and the second image detection unit. When a time difference between output time of second image data and output time of first image data is larger than or equal to a postponed time threshold, a synchronization signal is transmitted by the monitoring unit. The extension interval generation unit bases the time difference and the rate of outputting the first image to generate an extension interval. When receiving the synchronization signal, the control unit adjusts the rate of outputting the first image by controlling the first image detection unit. Therefore, the first image data and the second image data could be synchronized.