Abstract: A semiconductor device includes a substrate; a storage element disposed over the substrate in a first region; a control gate disposed over the storage element; a high-k dielectric layer disposed on the substrate in a second region adjacent the first region; and a metal select gate disposed over the high-k dielectric layer and adjacent to the storage element and the control gate.

Abstract: To provide a PLD having a reduced circuit area and an increased operation speed. In the circuit structure, a gate of a transistor provided between an input terminal and an output terminal of a programmable switch element is in an electrically floating state in a period when a signal is input to the programmable switch element. The structure enables the voltage of a gate to be increased by a boosting effect in response to a signal supplied from programmable logic elements, suppressing a reduction in amplitude voltage. This can reduce a circuit area by a region occupied by a booster circuit such as a pull-up circuit and increase operation speed.

Abstract: A fan-out package includes a molding compound, a conductive plug and a stress buffer. The conductive plug is in the molding compound. The stress buffer is between the conductive plug and the molding compound. The stress buffer has a coefficient of thermal expansion (CTE). The CTE of the stress buffer is between a CTE of the molding compound and a CTE of the conductive plug. A method of manufacturing a three dimensional includes plating a post on a substrate, and disposing a stress buffer on the sidewall of the post. The method further includes surrounding the stress buffer with a molding compound.

Abstract: A device includes a Doherty amplifier having a main path and a peaking path. The Doherty amplifier includes a main amplifier configured to amplify a signal received from the main path and a peaking amplifier configured to amplify a signal received from the peaking path when the signal received from the peaking path exceeds a predetermined threshold. The device includes a first driver amplifier connected to the main path of the Doherty amplifier. The first driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the main amplifier. The device includes a second driver amplifier connected to the peaking path of the Doherty amplifier. The second driver amplifier is configured to exhibit an amplitude and phase distortion characteristic that is an inverse of an amplitude and phase distortion characteristic of the peaking amplifier.

Abstract: Embodiments of mechanisms of an optical inspection system for inspecting an object are provided. The optical inspection system includes a light source emitting a coherent beam having a first width, and a beam expander increasing the first width to a second width. The optical inspection system also includes an polaroid module adjacent to the beam expander and polarizing the coherent beam. The object generates an inspection beam with an interference pattern by reflecting the polarized coherent beam. The optical inspection system further includes an image module capturing the inspection beam.

Abstract: A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

Abstract: A semiconductor device includes a semiconductor substrate, a pad region on the semiconductor substrate, a passivation layer over the semiconductor substrate and at least a portion of the pad region, and a bump structure overlying the pad region. The passivation layer has an opening defined therein to expose at least another portion of the pad region. The bump structure is electrically connected to the pad region via the opening. The bump structure includes a copper layer and a SnAg layer overlying the copper layer. The SnAg layer has a melting temperature higher than the eutectic temperature of Sn and Ag.

Abstract: A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

Abstract: In the case of using an analog buffer circuit, an input voltage is required to be added a voltage equal to a voltage between the gate and source of a polycrystalline silicon TFT; therefore, a power supply voltage is increased, thus a power consumption is increased with heat. In view of the foregoing problem, the invention provides a depletion mode polycrystalline silicon TFT as a polycrystalline silicon TFT used in an analog buffer circuit such as a source follower circuit. The depletion mode polycrystalline silicon TFT has a threshold voltage on its negative voltage side; therefore, an input voltage does not have to be increased as described above. As a result, a power supply voltage requires no increase, thus a low power consumption of a liquid crystal display device in particular can be realized.

Abstract: A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

Abstract: An average inductor valley current mode voltage control device for a DC/DC converter comprises a sample-hold inductor valley voltage unit receiving at least two inductor valley currents of at least two consecutive cycles produced by the inductor and then converting the at least two inductor valley currents into an average inductor valley voltage; and a reference voltage generation unit connected to the sample-hold inductor valley voltage unit and a transistor switch of the DC/DC converter and receiving a voltage two times of an external voltage corresponding to two times of an average inductor current produced by the inductor, wherein a reference voltage is generated by subtracting the average inductor valley voltage from the voltage two times of the external voltage for control of the switching of the transistor switch of the DC/DC converter while a peak inductor current is stabilized at a designated value.

Abstract: A surface metal wiring structure for a substrate includes one or more functional ?bumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional ?bumps. The surface metal wiring structure also includes a plurality of sacrificial ?bumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial ?bumps are positioned closer to the electrical test pad than the one or more functional ?bumps.

Abstract: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.

Abstract: An object of the present invention is to provide a liquid crystal display device which allows a desirable storage capacitor to be ensured in a pixel without decreasing the aperture ratio in response to changes in frame frequency. In a liquid crystal display device including a pixel transistor and two capacitive elements using an oxide semiconductor material in each pixel, one of the capacitive elements comprises a light-transmitting material to improve the aperture ratio of the pixel. Furthermore, through the use of characteristics of the light-transmitting capacitive element, the size of the storage capacitor in the pixel is varied by adjusting the voltage value of a capacitance value in response to the frame frequency varied depending on images displayed.

Abstract: An electronic design automation (EDA) tool for adding a feature to a target parameterized cell (pcell) in an electronic circuit design includes a memory that stores the electronic circuit design, and a processor in communication with the memory. The processor defines a specification of an add-on pcell. The specification includes a feature to be added to the target pcell. The processor reads the properties associated with the target pcell and generates the add-on pcell based on its specification and the properties of the target pcell. The add-on pcell then is instantiated and bound to the target pcell, which adds the feature to the target pcell.

Abstract: A gated voltage-controlled oscillator receives a gating signal and outputs an oscillating signal having a frequency corresponding to the gating signal. The gated voltage-controlled oscillator includes a delay unit, having a first terminal and a second terminal, and a multiplexer, having a first input terminal, a second input terminal, a select terminal and an output terminal. The first input terminal and the select terminal are coupled to the gating signal. The second input terminal is coupled to the first terminal of the delay unit. The output terminal outputs the oscillating signal and is coupled to the second terminal of the delay unit. The delay unit delays the oscillating signal and outputs the delayed oscillating signal into the second input terminal. The multiplexer outputs a signal of the first input terminal or the second input terminal according to the gating signal.

Abstract: A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 ?m thick or less, preferably approximately 325 ?m, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material.

Abstract: Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.

Abstract: Configuration is performed in accordance with a plurality of states when power supply voltage is supplied intermittently. At the time of start of supply of power supply voltage with configuration, a programmable logic device is sequentially changed into a first state where configuration data is not set in a configuration memory, a second state where the configuration memory is initialized, and a third state where the configuration data can be set in the configuration memory. At the time of start of supply of power supply voltage without configuration, the programmable logic device is sequentially changed into a fourth state where the configuration data is not set in the configuration memory and the third state. The first to fourth states are switched to any one of the states by control of a first state signal and a second state signal.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.