Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.

Abstract: The invention relates to a method of improving the performance of optical receivers within optical transceivers by compensating for crosstalk, both optical and electrical. Optical crosstalk may arise within the optical receiver from a variety of sources including directly from the optical emitter within, indirectly from the optical emitter via losses, and losses of other received wavelengths within the optical transceiver coupled to the optical receiver. Electrical crosstalk may arise for example between the electrical transmission lines of the optical transmitter and optical receiver. The method comprises providing a secondary optical receiver in predetermined location to the primary optical receiver, the optical receivers being electrically coupled such that the crosstalk induced photocurrent in the secondary optical receiver is subtracted from the photocurrent within the primary optical receiver. The method may be applicable to either monolithic and hybrid optical transceivers.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide.

Abstract: The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination.

Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Abstract: The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-layer III-V semiconductor structure, which has a semiconductor substrate; an epitaxial semiconductor structure grown on this substrate in one growth step; a common waveguide; and a plurality of wavelength-designated waveguides; all the waveguides being formed in this epitaxial structure using conventional semiconductor processing techniques. Each waveguide being defined by the bandgap wavelength of its core region and all the waveguides being arranged vertically in order of ascending bandgap wavelength; with the common waveguide placed at the bottom of the structure and the wavelength-designated waveguide having the longest bandgap wavelength placed at the top of the structure. In use, the bandgap wavelength of the common waveguide being well below any operating wavelength, therefore providing conditions for low-loss propagation of each operating wavelength to its designated waveguide through the common waveguide.

Abstract: The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination.

Abstract: A switching node is disclosed for the routing of packetized data employing a multi-stage packet based routing fabric combined with a plurality of memory switches employing memory queues. The switching node allowing reduced throughput delays, dynamic provisioning of bandwidth and packet prioritization.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide.

Abstract: The invention describes an integrated-photonics arrangement, implementable in a multi-layer III-V semiconductor structure, which has a semiconductor substrate; an epitaxial semiconductor structure grown on this substrate in one growth step; a common waveguide; and a plurality of wavelength-designated waveguides; all the waveguides being formed in this epitaxial structure using conventional semiconductor processing techniques. Each waveguide being defined by the bandgap wavelength of its core region and all the waveguides being arranged vertically in order of ascending bandgap wavelength; with the common waveguide placed at the bottom of the structure and the wavelength-designated waveguide having the longest bandgap wavelength placed at the top of the structure. In use, the bandgap wavelength of the common waveguide being well below any operating wavelength, therefore providing conditions for low-loss propagation of each operating wavelength to its designated waveguide through the common waveguide.

Abstract: The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other.