Patents Assigned to OPNOVIX CORP.
  • Indium-gallium-nitride structures and devices
    Patent number: 10847625
    Abstract: InGaN layers characterized by an in-plane lattice constant within a range from 3.19 to 3.50 ? are disclosed. The InGaN layers are grown by coalescing InGaN grown on a plurality of GaN regions. The InGaN layers can be used to fabricate optical and electronic devices for use in light sources for illumination and display applications.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: November 24, 2020
    Assignee: OPNOVIX CORP.
    Inventor: Michael R. Krames