Abstract: Provided is an electro-absorption modulated laser including a lower clad including an electro-absorption modulation (EAM) region and a laser diode (LD) region, an upper clad on the lower clad, an active layer between the lower clad and the upper clad, an upper electrode on the upper clad, and a grating in the upper clad, wherein the grating includes a first grating and a second grating on an upper surface of the first grating, a band gap wavelength of the first grating is less than a wavelength of laser light output from the LD region, and a bad gap wavelength of the second grating is larger than the wavelength of the laser light.

Abstract: Provided is a multi-channel, bi-directional optical communication module.

Abstract: A structure for impedance signal lines of a transistor outline (TO)-can type semiconductor package is disclosed. The TO-can type semiconductor package may include a header including a semiconductor laser diode disposed on one side thereof; a signal line penetrating the header and including a one end protruding from the one side of the header; and an edge-coupled microstrip (ECM) portion connected to the signal line. The ECM portion is configured to include a dielectric and ECM lines are formed as conductive patterns having predetermined widths and leaving a predetermined space therebetween on a first side of the dielectric, and respectively connected to the signal lines.

Abstract: Provided is a multi-channel, bi-directional optical communication module.