Patents Assigned to OPTOENEGY Inc.
  • Semiconductor optical element, semiconductor optical element forming structure, and method of manufacturing semiconductor optical element using the same
    Patent number: 11799270
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: October 24, 2023
    Assignees: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMING STRUCTURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT USING THE SAME
    Publication number: 20220294188
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Application
    Filed: June 1, 2022
    Publication date: September 15, 2022
    Applicants: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • Semiconductor optical element, semiconductor optical element forming structure, and method for manufacturing semiconductor optical element using the same
    Patent number: 11387628
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: July 12, 2022
    Assignees: FUJIKURA LTD., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada
  • SEMICONDUCTOR OPTICAL ELEMENT, SEMICONDUCTOR OPTICAL ELEMENT FORMING STRUCTURE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT USING THE SAME
    Publication number: 20200403381
    Abstract: A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.
    Type: Application
    Filed: February 22, 2019
    Publication date: December 24, 2020
    Applicants: Fujikura Ltd., OPTOENEGY Inc.
    Inventors: Rintaro Morohashi, Ryozaburo Nogawa, Tomoaki Koui, Yumi Yamada