Abstract: A readout circuit, for at least one sensing element, includes an amplifier including an input node for receiving charges from the sensing element or elements and an output node, a first feedback loop comprising a feedback capacitor, and at least one second feedback loop comprising another feedback capacitor, between the output and input nodes of the amplifier, for defining different gains. The at least two feedback capacitors being each connectable to a reference voltage supply via respective switches, for pre-loading the feedback capacitors with a predetermined charge different from the charge obtainable from the at least one sensing element, for sampling signals at a reset level before charge transferal. The loops comprising a respective switch between their capacitors and the output node, for operatively connecting and disconnecting each loop, for obtaining reset voltages at two different gains and signal voltages at two different gains.

Abstract: This disclosure discloses an LED assembly. The LED assembly includes a transparent mount with a top surface and a bottom surface opposite to the top surface, an LED chip arranged on the top surface, an electrode plate, a first phosphor layer having a first phosphor, and a second phosphor layer having a second phosphor, wherein the transparent mount and the electrode plate substantially have a same width. The electrode plate is arranged on an edge of the top surface and electrically connected to the LED chip.

Abstract: Disclosed are LED assemblies and their applications. An example LED assembly has an LED chip, a supportive structure and a transparent structure. The LED chip includes a transparent substrate, at least one LED cell, and two pads. The transparent substrate has a top surface with two terminals. The LED cell is formed on the top surface, and includes at least one light-emitting stack configured to emit light. The pad is formed on the top surface at the two terminals. The supportive structure has a transparent portion and a conductive portion. The conductive portion is connected to the transparent portion to fix the LED chip and supply electric power to at least one of the pads. The transparent structure encapsulates the LED cell.

Abstract: Disclosed embodiments include a manufacturing method for an LED assembly. Providing a first carrier, wherein several LED chips are formed on the first carrier, and providing a second carrier. Attaching the second carrier to the LED chips and detaching the first carrier from the LED chips but leaving the LED chips on the second carrier.

Abstract: This disclosure discloses an LED assembly. The LED assembly comprises a transparent substrate; a first phosphor layer; a transparent mount, having a plurality of trenches substantially in parallel to each other, wherein the first phosphor layer is positioned between the transparent substrate and the transparent mount; an LED chip, mounted on an area of the transparent mount, wherein the area is located substantially between the trenches; and a second phosphor layer inside the trenches.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.

Abstract: The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.

Abstract: A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.

Abstract: A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.

Abstract: A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.

Abstract: A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.

Abstract: An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Abstract: LED assemblies and related LED light bulbs. An LED assembly has a flexible, transparent substrate, an LED chip on the first surface and electrically connected to two adjacent conductive sections, a first wavelength conversion layer, formed on the first surface to substantially cover the LED chip, and a second wavelength conversion layer formed on the second surface. The flexible, transparent substrate has first and second surfaces opposite to each other, and several conductive sections, which are separately formed on the first surface.

Abstract: Disclosed is an LED assembly having an omnidirectional light field. The LED assembly has a transparent substrate, LED chips, and first and second electrode plates. The transparent substrate comprises first and second surfaces facing to opposite orientations respectively. The transparent substrate has a via hole tunneling therethrough, which is formed with conductive material to provide a conductive via. The LED chips are mounted on the first surface. The first and second electrode plates are formed on the first and second surfaces respectively. The light emitting diode chips and the conductive via are electrically connected in series between the first and second electrode plates.

Abstract: A light-emitting lamp has a bulb shell, a convective accelerator, a light-emitting filament and a bulb base. The bulb shell defines an interior volume filled with a filling gas, and comprises a first transparent material. The convective accelerator is disposed within the interior volume, and comprises a second transparent material. The convective accelerator contains a flue with first and second openings. The light-emitting filament is disposed within the flue, comprising a plurality of semiconductor light-emitting elements. When the light-emitting filament emits light to generate heat, the flue allows a convection flow of the filling gas to pass into one of the first and second openings. The bulb base supports the bulb shell and the light-emitting filament, and has electrical conductors in electrical communication with the light-emitting filament. The first and the second openings have different distances apart from the bulb base.

Abstract: A semiconductor light emitting device includes a substrate having a main surface and an exposed surface; an epitaxial structure, disposed on the main surface of the substrate, having at least a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, wherein the first type layer has a first sidewall including at least a first etched surface and a second etched surface, wherein angles between the etched surfaces and the exposed surface are acute angles; and an electrode structure disposed on the epitaxial structure.

Abstract: A power device disclosed herein comprises a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer and comprising a first element of group III, a third semiconductor layer formed on the second semiconductor layer and a plurality of first interlayers formed in the third semiconductor layer and comprising a second element of III group. The first element of III group and the second element of III group are the same. The second semiconductor layer and the plurality of first interlayers are doped with carbon.

Abstract: A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

Abstract: A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.

Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region, and a plurality of first bridges electrically connecting the plurality of second electrodes. The matrix electrode structure comprises a plurality of first electrodes arranged on the epitaxial stack and a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes. One of the bridges is arranged between two of the second electrodes and crossed over one of the first electrodes.