Abstract: A multi-terminal surge protection device able to absorb surges of either polarity between lines and between a line and ground, in which the difference in operating time between the device elements connected to lines is reduced. A plurality of unipolar surge protection device elements are used which only operate to absorb surges of a specific polarity, and do not exhibit a reverse withstand characteristic upon application of a reverse-polarity voltage. One element is connected to a first line and another element to a second line, while a different element is connected to ground. A semiconductor substrate and second electrode are used that are common to all elements. To prevent lateral interference between elements, at least the element connected to ground is isolated from the line elements.
Abstract: In a breakover type surge protection device utilizing punch-through that comprises a second semiconductor region forming a first pn junction with a first semiconductor region, a third semiconductor region forming a second pn junction with the second semiconductor region and a fourth semiconductor region forming a third pn junction with the first semiconductor region at a place apart from the second semiconductor region, the second semiconductor region is constituted of a punch-through suppression region portion disposed to cover the corners of the third semiconductor region and a punch-through generation region portion disposed at a place where its thickness can be made uniform. Fabricating surge protection devices according to this configuration reduces variation among their breakover currents and hold currents and increases their surge absorption capacity.
Type:
Grant
Filed:
March 26, 1993
Date of Patent:
January 23, 1996
Assignees:
Agency of Industrial Science & Technology, Ministry of International Trade & Industry, Sankosha Corporation, Optotechno Co., Ltd.