Abstract: A constant current driving device includes an electronic device, a transistor, a rectifying circuit, a current limiting element, an impedance element, and a first and a second energy storage element. A first end of the electronic device is connected to a first end of a load element. A first end of the transistor is connected to a second end of the load element, a second end of the transistor is connected to a second end of the electronic device through an impedance element, and a control end of the transistor is connected to the second end of the electronic device through a first energy storage element. The rectifying circuit connected between the first end and the control end of the transistor. The current limiting element is connected in parallel with the rectifying circuit. The second energy storage element is connected between the first and second end of the electronic device.

Abstract: A constant current driving device includes an electronic device, a transistor, a rectifying circuit, a current limiting element, an impedance element, and a first and a second energy storage element. A first end of the electronic device is connected to a first end of a load element. A first end of the transistor is connected to a second end of the load element, a second end of the transistor is connected to a second end of the electronic device through an impedance element, and a control end of the transistor is connected to the second end of the electronic device through a first energy storage element. The rectifying circuit connected between the first end and the control end of the transistor. The current limiting element is connected in parallel with the rectifying circuit. The second energy storage element is connected between the first and second end of the electronic device.

Abstract: An electronic device is provided. The electronic device includes a plurality of load units, a plurality of serial-parallel switch units and a control module. The control module switches the serial-parallel switch units to a first state or a second state according to a level variation of an input voltage. Connection relations of the load units are correspondingly changed according to the level variation of the input voltage. In this way, the electronic device can be driven by an alternating-current voltage.

Abstract: A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is disposed on the substrate and has an opening exposing the pad, wherein the dielectric stack layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer located between the first dielectric layer and the second dielectric layer, and there is a gap between the portion of the first dielectric layer surrounding the opening and the portion of the second dielectric layer surrounding the opening. The first plating layer is disposed at the dielectric stack layer. The second plating layer is disposed at the pad, wherein the gap isolates the first plating layer from the second plating layer.

Abstract: A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is disposed on the substrate and has an opening exposing the pad, wherein the dielectric stack layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer located between the first dielectric layer and the second dielectric layer, and there is a gap between the portion of the first dielectric layer surrounding the opening and the portion of the second dielectric layer surrounding the opening. The first plating layer is disposed at the dielectric stack layer. The second plating layer is disposed at the pad, wherein the gap isolates the first plating layer from the second plating layer.

Abstract: A fabricating process of circuit substrate sequently includes: providing a substrate with a pad and a dielectric stack layer disposed at the substrate and overlaying the pad, in which the stack layer includes two dielectric layers and a third dielectric layer located between the two dielectric layers, and the etching rate of the third dielectric layer is greater than the etching rate of the two dielectric layers; forming an opening corresponding to the pad at the stack layer; performing a wet etching process on the stack layer to remove the portion of the third dielectric layer surrounding the opening to form a gap between the portions of the two dielectric layers surrounding the opening; performing a plating process on the stack layer and the pad to respectively form two plating layers at the stack layer and the pad, in which the gap isolates the two plating layers from each other.

Abstract: A fabricating process of circuit substrate sequently includes: providing a substrate with a pad and a dielectric stack layer disposed at the substrate and overlaying the pad, in which the stack layer includes two dielectric layers and a third dielectric layer located between the two dielectric layers, and the etching rate of the third dielectric layer is greater than the etching rate of the two dielectric layers; forming an opening corresponding to the pad at the stack layer; performing a wet etching process on the stack layer to remove the portion of the third dielectric layer surrounding the opening to form a gap between the portions of the two dielectric layers surrounding the opening; performing a plating process on the stack layer and the pad to respectively form two plating layers at the stack layer and the pad, in which the gap isolates the two plating layers from each other.

Abstract: An electronic device is provided. The electronic device includes a plurality of load units, a plurality of serial-parallel switch units and a control module. The control module switches the serial-parallel switch units to a first state or a second state according to a level variation of an input voltage. Connection relations of the load units are correspondingly changed according to the level variation of the input voltage. In this way, the electronic device can be driven by an alternating-current voltage.