Patents Assigned to Ormet Circuits, Inc.
  • Patent number: 10727193
    Abstract: A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: July 28, 2020
    Assignee: ORMET CIRCUITS, INC.
    Inventors: Catherine Shearer, Eunsook Barber, Michael Matthews
  • Patent number: 9583453
    Abstract: Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: February 28, 2017
    Assignee: Ormet Circuits, Inc.
    Inventors: Catherine Shearer, Michael C Matthews, Peter A Matturi, Eunsook Barber, Richard Weaver
  • Patent number: 9545017
    Abstract: Invention z-axis interconnection structures provide a means to mechanically and electrically interconnect layers of metallization in electronic substrates reliably and in any configuration. Invention z-axis interconnection structures comprise a novel bonding film and conductive paste and one- and two-piece building block structures formed therefrom.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: January 10, 2017
    Assignees: Ormet Circuits, Inc., Integral Technology, Inc.
    Inventors: Christopher A Hunrath, Khang Duy Tran, Catherine A Shearer, Kenneth C Holcomb, G Delbert Friesen
  • Patent number: 9003648
    Abstract: The invention provides methods to mass laminate and interconnect high density interconnect circuit layers fabricated through parallel processing. Invention methods employ an inside-out interconnection strategy that eliminates plating of vias and provides defect-free outer circuit layers. Conductive paste and via layers are also key features of the invention.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: April 14, 2015
    Assignee: Ormet Circuits, Inc.
    Inventor: Ken Holcomb
  • Patent number: 9005330
    Abstract: Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: April 14, 2015
    Assignee: Ormet Circuits, Inc.
    Inventors: Catherine Shearer, Peter A Matturri, Kenneth C Holcomb, Michael C Matthews
  • Patent number: 8840700
    Abstract: The present invention provides conductive metal compositions for electronic applications, and methods of preparation and uses thereof. More specifically, the present invention provides metallic particle transient liquid phase sintering compositions containing blended formulations of metal and metal alloy components that form interconnected conductive metallurgical networks with increased stability, resistance to thermal stress and ability to mitigate CTE mismatch between materials.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: September 23, 2014
    Assignee: Ormet Circuits, Inc.
    Inventors: Catherine Shearer, Kenneth C. Holcomb, G. Delbert Friesen, Michael C. Matthews
  • Publication number: 20140231126
    Abstract: Invention z-axis interconnection structures provide a means to mechanically and electrically interconnect layers of metallization in electronic substrates reliably and in any configuration. Invention z-axis interconnection structures comprise a novel bonding film and conductive paste and one- and two-piece building block structures formed therefrom.
    Type: Application
    Filed: February 18, 2014
    Publication date: August 21, 2014
    Applicants: INTEGRAL TECHNOLOGY, INC., ORMET CIRCUITS, INC.
    Inventors: Christopher A Hunrath, Khang Duy Tran, Catherine A Shearer, Kenneth C Holcomb, G Delbert Friesen
  • Publication number: 20140120356
    Abstract: An inventive composition and process for formation of a conductive bonding film are disclosed. The invention combines adhesive bonding sheet technologies (e.g. die attach films, or DAFs) with the electrical and thermal conductivity performance of transient liquid phase sintered paste compositions. The invention films are characterized by high bulk thermal and electrical conductivity within the film as well as low and stable thermal and electrical resistance at the interfaces between the inventive film and metallized adherends.
    Type: Application
    Filed: March 15, 2013
    Publication date: May 1, 2014
    Applicant: ORMET CIRCUITS, INC.
    Inventor: ORMET CIRCUITS, INC.
  • Publication number: 20140042212
    Abstract: Transient liquid phase sintering compositions comprising one or more high melting point metals and one or more low melting temperature alloys are known in the art as useful compositions for creating electrically and/or thermally conductive pathways in electronic applications. The present invention provides transient liquid phase sintering compositions that employ non-eutectic low melting temperature alloys for improved sintering and metal matrix properties.
    Type: Application
    Filed: December 31, 2012
    Publication date: February 13, 2014
    Applicant: Ormet Circuits, Inc.
    Inventors: Catherine Shearer, Peter A. Matturri, Kenneth C. Holcomb, Michael C. Matthews
  • Patent number: 8221518
    Abstract: The present invention provides electrically and thermally conductive compositions for forming interconnections between electronic elements. Invention compositions comprise three or more metal or metal alloy particle types and an organic vehicle comprising a flux that is application specific. The first particle type includes a reactive high melting point metal that reacts with a reactive low melting point metal(s) in the other particles to form intermetallic species. The reactive low melting point metal(s) of the invention are provided in two distinct particle forms. The first reactive low melting point metal particle includes a carrier that facilitates the reaction with the reactive high melting point metal. The second reactive low melting point metal particle acts primarily as a source of the reactive low melting point metal.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: July 17, 2012
    Assignee: Ormet Circuits, Inc.
    Inventors: Catherine Shearer, Kenneth C. Holcomb, G. Delbert Friesen, Michael C. Matthews
  • Publication number: 20110171372
    Abstract: The present invention provides conductive metal compositions for electronic applications, and methods of preparation and uses thereof. More specifically, the present invention provides metallic particle transient liquid phase sintering compositions containing blended formulations of metal and metal alloy components that form interconnected conductive metallurgical networks with increased stability, resistance to thermal stress and ability to mitigate CTE mismatch between materials.
    Type: Application
    Filed: November 5, 2010
    Publication date: July 14, 2011
    Applicant: ORMET CIRCUITS, INC.
    Inventors: Catherine Shearer, Kenneth C. Holcomb, G. Delbert Friesen, Michael C. Matthews
  • Publication number: 20100252616
    Abstract: The present invention provides electrically and thermally conductive compositions for forming interconnections between electronic elements. Invention compositions comprise three or more metal or metal alloy particle types and an organic vehicle comprising a flux that is application specific. The first particle type includes a reactive high melting point metal that reacts with a reactive low melting point metal(s) in the other particles to form intermetallic species. The reactive low melting point metal(s) of the invention are provided in two distinct particle forms. The first reactive low melting point metal particle includes a carrier that facilitates the reaction with the reactive high melting point metal. The second reactive low melting point metal particle acts primarily as a source of the reactive low melting point metal.
    Type: Application
    Filed: March 31, 2010
    Publication date: October 7, 2010
    Applicant: ORMET CIRCUITS, INC.
    Inventors: Catherine Shearer, Kenneth C. Holcomb, G. Delbert Friesen, Michael C. Matthews
  • Publication number: 20100230145
    Abstract: The invention provides methods to mass laminate and interconnect high density interconnect circuit layers fabricated through parallel processing. Invention methods employ an inside-out interconnection strategy that eliminates plating of vias and provides defect-free outer circuit layers. Conductive paste and via layers are also key features of the invention.
    Type: Application
    Filed: December 28, 2007
    Publication date: September 16, 2010
    Applicant: ORMET CIRCUITS, INC.
    Inventor: Ken Holcomb
  • Patent number: 6716036
    Abstract: Disclosed are electrical connector devices with integrated electronic components, including magnetic devices. The electronic components integrated into the connector are electrically connected to one another and the connector pins by an electrically conductive circuit formed directly on the connector housing. Formation of the electrically conductive circuit directly on the connector housing substantially reduces the number of assembly steps required to manufacture the connector.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: April 6, 2004
    Assignee: Ormet Circuits, Inc.
    Inventor: Pradeep Gandhi
  • Publication number: 20030216061
    Abstract: Disclosed are electrical connector devices with integrated electronic components, including magnetic devices. The electronic components integrated into the connector are electrically connected to one another and the connector pins by an electrically conductive circuit formed directly on the connector housing. Formation of the electrically conductive circuit directly on the connector housing substantially reduces the number of assembly steps required to manufacture the connector.
    Type: Application
    Filed: May 15, 2002
    Publication date: November 20, 2003
    Applicant: Ormet Circuits, Inc.
    Inventor: Pradeep Gandhi