Abstract: A method for producing an organic, radiation-emitting component is specified, wherein at least one layer (10) containing an emitter material is produced in a radiation-emitting region (4) of the component, wherein the layer (10) is produced by means of atomic layer deposition and has a thickness of at most 2 nm.

Abstract: A vertically emitting semiconductor laser comprising an external resonator (7), a semiconductor body (1), and at least one pump radiation source (9). The semiconductor body (1) has a quantum layer structure (2) as an active zone comprising quantum layers (3) and barrier layers (4) lying in between. The semiconductor body (1) furthermore has a Bragg reflector (5) on one side of the quantum layer structure (2). The Bragg reflector (5) comprises layers which are arranged aperiodically with respect to one another in such a way that an absorption of the pump radiation (10) is essentially effected within the quantum layer structure (2).