Abstract: A small module contains means for converting an electrical signal to a correspondingly modulated light signal on an optical fiber. Frequency of the signal can range from D.C up to many gigahertz. A semiconductor laser diode is mounted on a high thermal conductivity substrate on a thermoelectric cooler for controlling laser temperature. The optical fiber output is soldered to the laser substrate with an end in alignment with the laser junction. A laser bias circuit is on a connection substrate adjacent to the laser substrate. A connection substrate also includes a deposited signal lead line connected to the bias circuit by an impedance matching means. Electrical signals from the pin of an external coaxial connector are coupled to the lead line. The laser bias circuit and signal lead line are electrically connected to the laser diode by wires between the connection substrate and the laser substrate. A photodiode in the module in the light path from the laser provides a control signal.

Abstract: A buried heterostructure window device has an elongated layer of gain medium surrounded by a lower index of refraction medium of guiding light along the length of the gain medium. A window and an antireflective layer are deposited on the output end of the gain layer to minimize reflections. A portion of the gain medium nearer the output end of the device is electrically pumped, leaving an unpumped end of the gain medium remote from the output end. The unpumped portion of the gain medium absorbs light travelling along the length of the gain medium. This inhibits reflection from the end of the gain medium remote from the output end. When the device is pumped with a moderate power level, strong superluminescent output is obtained. When the device is pumped well above the lasing threshold by reason of "burning through" the unpumped absorbing portion of the gain medium, a single mode laser is obtained with side band power at least 20 db below the power of the principal oscillation mode.