Abstract: Developed is high-efficiency synthesis method and apparatus capable of promoting the initial growth of carbon nanostructure by eliminating the initial fluctuation time and rising time in raw gas flow quantity. A high-efficiency synthesis method of carbon nanostructure according to the present invention is a high-efficiency synthesis method of carbon nanostructure, the method comprising: bringing raw material gas and a catalyst into contact with each other under reactive conditions so as to produce a carbon nanostructure, wherein: the initiation of contact of the raw material gas with the catalyst is carried out instantaneously. Reaction conditions such as temperature and raw material gas concentration are set so as to meet those for catalyst growth, and under the reaction conditions, the initiation of contact of raw material gas G with catalyst 6 is carried out instantaneously.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract: A method of carburizing treatment is proposed in which if carburizing is carried out at a low temperature, carbon will not turn amorphose and deposit on the surface of a titanium metal but reliably penetrate into between metallic atoms. It is a method of surface treatment of a titanium metal comprising the steps of heating the titanium metal to a temperature of 400-690° C. in a cleaning gas atmosphere containing hydrogen gas, subjecting the surface of the titanium metal to cleaning by applying a DC voltage of 200-1500 V, and plasma carburizing in an atmosphere comprising a carburizing gas having an atomic weight ratio of hydrogen atoms (H) to carbon atoms (C) adjusted to 1?H/C?9 at a pressure of 13-400 Pa and a temperature of 400-690° C. Ionization reaction in the gas is suppressed suitably. Because there exists no excessive carbon which is not used for carburization but turns soot or glass-like carbon, in the atmosphere during carburization, carburizing reaction progresses smoothly.

Abstract: In a construction for electrically connecting electrical unit with joint surfaces thereof opposed to each other, wiring patterns electrically connected with distortion gauges are formed on function-element forming surfaces of each electrical three-dimensional unit and are extended to edge portions formed between the function-element forming surfaces and adjacent wiring surfaces as the joint surfaces to form first lands; second lands extending from the edge portions by a specified distance are formed at positions of the wiring surfaces corresponding to the first lands; and electrical connectors displaying a joining performance upon being pressed together are formed to bridge the first and second lands while being held in close contact with the first and second lands. A plurality of three-dimensional electrical unit can be securely and easily electrically connected with each other with high precision.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

Abstract: Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Abstract: The purpose of the present invention is to provide high manganese cast iron containing spheroidal vanadium carbide and method for making which is nonmagnetic as well as superior mechanical properties such as wear-resistance and toughness, and further does not require a water toughing heat treatment which has been needed when nonmagnetic high manganese steel (high manganese cast steel) is obtained by crystallized spheroidal vanadium in austenite matrix, and the high manganese cast iron containing spheroidal vanadium carbide is comprised of C 1.5˜4.0 weight %, V 6˜15 weight %, Si 0.2˜4.0 weight %, Mn 10˜18 weight %, Mg 0.01˜0.1 weight %, remaining iron (Fe) and inevitable impurities, spheroidal vanadium carbide is crystallized within a structure.

Abstract: In a construction for electrically connecting electrical unit with joint surfaces thereof opposed to each other, wiring patterns electrically connected with distortion gauges are formed on function-element forming surfaces of each electrical three-dimensional unit and are extended to edge portions formed between the function-element forming surfaces and adjacent wiring surfaces as the joint surfaces to form first lands; second lands extending from the edge portions by a specified distance are formed at positions of the wiring surfaces corresponding to the first lands; and electrical connectors displaying a joining performance upon being pressed together are formed to bridge the first and second lands while being held in close contact with the first and second lands. A plurality of three-dimensional electrical unit can be securely and easily electrically connected with each other with high precision.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130 of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

Abstract: The purpose of the present invention is to provide high manganese cast iron containing spheroidal vanadium carbide and method for making thereof which is nonmagnetic as well as superior mechanical properties such as wear-resistance and toughness, and further does not require a water toughing heat treatment which has been needed when nonmagnetic high manganese steel (high manganese cast steel) is obtained by crystallized spheroidal vanadium in austenite matrix, and the high manganese cast iron containing spheroidal vanadium carbide is comprised of C 1.5˜4.0 weight %, V 6˜15 weight %, Si 0.2˜4.0 weight %, Mn 10˜18 weight %, Mg 0.01˜0.1 weight %, remaining iron (Fe) and inevitable impurities, spheroidal vanadium carbide is crystallized within a structure.

Abstract: The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.

Abstract: There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.

Abstract: A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate 100, which has a surface silicon layer 130, of a predetermined thickness and a buried insulator 120, in a heating furnace 200 and of increasing the temperature of the atmosphere within heating furnace 200 while supplying a mixed gas (G1+G2) of a hydrogen gas G1 and of a hydrocarbon gas G2 into heating furnace 200, thereby, of metamorphosing surface silicon layer 130 of SOI substrate 100 into a single crystal silicon carbide thin film 140.

Abstract: To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

Abstract: The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.