Abstract: Fine crosslinked-resin particles having such a high degree of crosslinking that good mechanical strength, heat resistance and solvent resistance can be developed. The fine crosslinked-resin particles have a mean particle diameter in the range of not less than 0.01 &mgr;m to not more than 0.30 &mgr;m and are such that when 10 g of powders comprising the fine crosslinked-resin particles and 20 g of iron powders are put in a 300 ml glass ball mill container containing 5 g of polyamide ball of a diameter of 2 mm, 10 g of polyamide ball of a diameter of 5 mm and 10 g of polyamide ball of a diameter of 10 mm and are agitated and mixed by rotating the ball mill container at a rotation speed of 100 rpm for 30 minutes and, then, the mixed powders are taken out from the ball mill container and are observed by an electron microscope, not more than two defective fine crosslinked-resin particles are observed out of 20 fine crosslinked-resin particles arbitrarily selected from the mixed powders.

Abstract: In a decarbonation process for removing carbon dioxide from a carbon dioxide-containing gas with the use of an amine compound-containing absorbing solution, an amine compound accompanying a decarbonated exhaust gas is efficiently recovered in the following manner: A water washing section is constituted in two stages, a first-stage water washing section 64 and a second-stage water washing section 65. In these water washing sections, recovery of the amine compound accompanying the decarbonated exhaust gas is performed sequentially. Regeneration tower refluxed water is supplied as washing water to the second-stage water washing section 65. Washing water is withdrawn from the second-stage water washing section 65 and supplied to the first-stage water washing section 64. Demisters 83, 84 and 85 are provided at outlets of a carbon dioxide absorption section 73, the first-stage water washing section 64 and the second-stage water washing section 65.

Abstract: Epitaxial wafers showing marked IG effects can be manufactured from silicon single crystals doped or not doped with nitrogen without requiring any additional heat treatment process step while reducing the density of epitaxial layer defects. According to the first manufacturing method, an epitaxial layer is allowed to grow on the surface of a wafer sliced from a single crystal produced by employing a cooling rate of not less than 7.3° C./min in the temperature range of 1200-1050° C. in the step of pulling up thereof. According to the second manufacturing method, an epitaxial layer is allowed to grow on the surface of a silicon wafer sliced from a silicon single crystal doped with 1×1012 atoms/cm3 to 1×1014 atoms/cm3 as produced by employing a cooling rate of not less than 2.7° C./min in the temperature range of 1150-1020° C. and then a cooling rate of not more than 1.2° C./min in the temperature range of 1000-850° C. in the step of pulling up thereof.

Abstract: A method of preparing a hetero-branched cyclodextrin comprising a glucosyl or a maltosyl group side chain and a mannosyl group .alpha.-bonded to a hydroxyl group of the glucosyl group or the maltosyl group of the side chain, the method involving reacting a liquid containing a branched cyclodextrin having a glucosyl or maltosyl group as the side chain and an .alpha.-mannosyl compound with an .alpha.-mannosyl transfer enzyme.

Abstract: A hetero-branched cyclodextrin (CD) having a glucosyl or maltosyl group as the side chain, in which a mannosyl group is .alpha.-bonded to the hydroxyl group of the glucosyl group of the side chain; and a method of efficiently preparing the same by reacting a branched cyclodextrin with an .alpha.-mannosidase. The hetero-branched CDs are useful in various fields such as in drugs, foods and cosmetics.