Abstract: A configuration of multiple LED modules comprising a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer, wherein the first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.

Abstract: The wavelength-converting casting composition is based on a transparent epoxy casting resin with a luminous substance admixed. The composition is used in an electroluminescent component having a body that emits ultraviolet, blue or green light. An inorganic luminous substance pigment powder with luminous substance pigments is dispersed in the transparent epoxy casting resin. The luminous substance is a powder of Ce-doped phosphors and the luminous substance pigments have particle sizes ?20 ?m and a mean grain diameter d50?5 ?m.

Abstract: A housing accommodating a semiconductor chip is set out. The housing and chip may be used for sending and/or receiving radiation. Popular applications of the housing may be in light emitting diodes. The housing includes a conductor strip that is punched into two electrically isolated portions. The housing further includes a cavity extending inwards from the top of the housing. The conductor portions include respective areas that are exposed at the bottom of the cavity. The semiconductor chip is bonded to one of the exposed areas and a wire bonds the chip to the second exposed area. The conductor portions also terminate in exposed electrodes, which allow for electrical connection of the chip with external devices. A window is formed in the cavity and the walls of the housing that form the cavity may be made of a reflective material. The electrodes remain unexposed to the window but for any residual areas about the chip and bonding wire within the first and second exposed areas.

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Abstract: A light source element is employed back-lighting of liquid crystal displays and that comprises an obliquely placed light exit face and/or light entry face. At its surfaces, the light waveguide is surrounded by reflectors into which suitable aperture regions are potentially formed. A plurality of light sources and/or a more direct view is provided and, thus, a corresponding increase of the luminance results. A method is also provided for the manufacture of a light source element with an integrated reflector.

Abstract: A light source element is employed back-lighting of liquid crystal displays and that comprises an obliquely placed light exit face and/or light entry face. At its surfaces, the light waveguide is surrounded by reflectors into which suitable aperture regions are potentially formed. A plurality of light sources and/or a more direct view is provided and, thus, a corresponding increase of the luminance results. A method is also provided for the manufacture of a light source element with an integrated reflector.

Abstract: For producing semiconductor chips by thin-film technology, an active layer (2) that has been grown on a substrate, with contact layers on the back side that have a base layer (3), is reinforced by a reinforcement layer (4). Next, an auxiliary carrier layer (5) is applied, which makes the further processing of the active layer (2) possible. The reinforcement layer (4) and the auxiliary carrier layer (5) replace the mechanical carriers used in conventional methods.

Abstract: A method for producing a surface mounting optoelectronic component comprises the following steps: readying a base body with the optoelectronic transmitter and/or receiver arranged in a recess of the base body, filling the recess of the base body with a transparent, curable casting compound, and placing the optical device onto the base body, whereby the optical device comes into contact with the casting compound.

Abstract: Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

Abstract: The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Abstract: A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.

Abstract: A circuit for adjusting and for at least partially compensating, respectively, thermal variations is provided, where a current source is connected to a temperature compensation unit, where the temperature compensation unit at least partially compensates thermal variations of the current source, wherein the temperature compensation unit has at least one device having a temperature coefficient, in particular having a negative temperature coefficient. Further a lighting module or a lamp may have such a circuit as well as a method for operating the circuit and/or the lamp and the lighting modules, respectively.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: The protective sheath has a basis for attaching the LED band and an at least partially light-transmissive covering attachable thereto, wherein the basis and the covering form an accommodation space for the LED band in the attached state.

Abstract: The invention describes two methods of fabricating semiconductor components in which a luminescence conversion element is applied directly to the semiconductor body (1). In the first method, a suspension (4) containing a bonding agent and at least one luminescent material (5) is applied to the semiconductor body (1) in layers. In the next step the solvent escapes, leaving only the luminescent material (5) with the bonding agent on the semiconductor body. In the second method, the semiconductor body (1) is provided with a layer (6) of bonding agent to which the luminescent material (5) is applied directly.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.